压晶体管的英文

• piezoelectric effect

• "压"英文翻译    press; push down; hold down; ...
• "晶体管"英文翻译    transistor; crystal valve
• "高压晶体管" 英文翻译 :    high voltage transistor
• "稳压晶体管" 英文翻译 :    voltage-stable tra istor; voltage-stable transistor
• "硅调压晶体管" 英文翻译 :    silicon voltage-regulative tra istor; silicon voltage-regulative transistor
• "硅稳压晶体管" 英文翻译 :    silicon voltage stable tra istor; silicon voltage stable transistor
• "自偏压晶体管电路" 英文翻译 :    self-bias transistor circuit
• "感压晶体" 英文翻译 :    sensor crystal
• "高压晶体生长炉" 英文翻译 :    high-pressure crystal growth furnace
• "晶体管" 英文翻译 :    transistor; crystal valve 硅晶体管 silicon transistor; 锗晶体管 germanium transistor; 晶体管放大器 transistor amplifier; transistorized amplifier; 晶体管管座 stem; 晶体管计算机 transistored computer; 晶体管接收机 transistor receiver; 晶体管收音机 transistor; transistor radio; 晶体管钟transistor clock; 晶体管自动计算机 transistor automatic computer
• "压晶" 英文翻译 :    piezocrystal
• "晶体管；半导体管" 英文翻译 :    transistor
• "晶体管 晶体管逻辑" 英文翻译 :    transistor transistor logic; ttl logic
• "晶体管-晶体管逻辑门" 英文翻译 :    transistor-transistor logic gate
• "晶体管，晶体管收音机" 英文翻译 :    transistor
• "晶体管晶体管逻辑" 英文翻译 :    logic, transistor-transistor (ttl); t2l; transistor-transistor logic; twin transistor logic
• "mos晶体管" 英文翻译 :    mos transistor
• "nmos晶体管" 英文翻译 :    nmos transistor
• "npn晶体管" 英文翻译 :    npn transistor
• "npn型晶体管" 英文翻译 :    npn transister
• "pnp晶体管" 英文翻译 :    pnp transistor; pnp-ransistor
• "pnp型晶体管" 英文翻译 :    pnp transistor
• "p型晶体管" 英文翻译 :    p-type transistor
• "t晶体管模式" 英文翻译 :    tee transistor model
• "薄膜晶体管" 英文翻译 :    tft thin film transistor; tfts; tft，thin film transistor; thin-film transistor

• Semiconductor discrete device . detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes
  半导体分立器件gp gt和gct级3dg182型npn硅小功率高反压晶体管.详细规范
• So to understand the negative resistance effect mechanism existing in the base - region of high - reverse - voltage transistor has great theory values and extensive application potential
  因此搞清镓基区高反压晶体管负阻of存在的机理，具有重大的理论价值，潜在着广阔的应用前景。
• With the development of doping technology , the formation of the base region in high - voltage transistor can be made by b diffusion technology , b - a1 paste - layer diffusion technology , close - tube ga - diffusion technology and open - tube gallium - diffusion technology
  随着掺杂工艺的不断发展，高反压晶体管基区的形成经历了扩硼工艺、硼铝涂层扩散工艺、闭管扩镓工艺到开管扩镓工艺的发展。