半高宽的英文

• full width at half maximum ( fwhm)
• full width half maximum
• fwhm (= full width at half maximum)fwhm

• "半"英文翻译    half
• "高"英文翻译    tall; high
• "宽"英文翻译    wide; broad
• "半高宽度" 英文翻译 :    half-height width
• "脉冲的半高宽度" 英文翻译 :    fwhm:full width half maximum
• "高宽" 英文翻译 :    takahiro
• "半高" 英文翻译 :    half-height
• "高宽比" 英文翻译 :    aspectratio; depth to width ratio; depth-to-width ratio; depth-width ratio; height to width aspect ratio; （h/s） aspect ratio(h/s)
• "半高度" 英文翻译 :    half height; half intensity; half-height
• "半高翻" 英文翻译 :    half clean
• "半高柜" 英文翻译 :    half height container
• "半高球" 英文翻译 :    chest-high ball; corner ball / corner
• "半高位" 英文翻译 :    demi-hauteur
• "半高线" 英文翻译 :    halfline
• "斑点高宽比" 英文翻译 :    spot height-to-width ratio
• "半峰高宽" 英文翻译 :    half-peak breadth
• "画面高宽比" 英文翻译 :    picture ratio
• "硫高宽比" 英文翻译 :    relief ratio; reliefratio
• "名义高宽比" 英文翻译 :    nominal aspect ratio
• "屏幕高宽比" 英文翻译 :    aspect ratio
• "踏步高宽比" 英文翻译 :    rise and run ratio
• "像素高宽比" 英文翻译 :    pixel aspect ratio
• "字高宽比" 英文翻译 :    word height to width ratio
• "半高底桁材" 英文翻译 :    half depth girder
• "半高度纵桁" 英文翻译 :    half depth girder

• With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
  以优化的缓冲层生长条件得到质量有明显改善的gan外延层， gan薄膜的( 0002 )面双晶dc - xrd扫描的半高宽为6arcmin 。
• It was found that multi - layer cycle growth method is propitious to increase quantum dots " uniformity and pl intensity and reduce the full width of half maximum ( fwhm ) of pl peaks
  ( 4 )发现循环生长多层inas量子点有利于提高量子点的均匀性，提高发光强度，减小发光峰半高宽。
• Now the most common standard to characterize the mechanical property of a surface of metallic material is the half width of the x - ray , and micro hardness
  摘要目前用来表征金属材料表面力学特征最常见的指标是x射线衍射谱线的半高宽和显微硬度，人们普遍认为，材料的半高宽值越大，其硬度越高。
• The relationships between the substrate temperature and the properties of zno films were studied in detail , we obtained a ( 002 ) orientated high quality zno thin films with the full width at half maximum ( fwhm ) of 0
  用这种方法在衬底温度为180条件下制备了( 0002 )择优取向， x -射线衍射峰的半高宽为0 . 2度的高质量氧化锌薄膜。
• Raman spectroscopic studies show that the intensities of the d with respect to g band and the widths ( fwhms ) of raman bands can represent the change of the cnx nanotube ' s crystallinity with the nitrogen incorporation
  对cn _ x纳米管样品的拉曼光谱研究结果显示，拉曼光谱中d带和g带的相对强度、拉曼峰半高宽等信息可以反映由于氮原子掺杂所引起的纳米管结晶有序程度的变化。
• We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900 . the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900 , suggesting that the film quality can be improved by annealing process
  当退火温度为900时获得了高质量的氧化锌薄膜，光致发光谱的半高宽为94mev ，通过变温实验得到激子束缚能为59mev ，表明退火过程提高了薄膜的质量。
• After measuring dark current , photocurrent and response to x pulse of gaas detector before and after 1 . 7 mev electronic radiation , the response tune , fall time of trailing edge , full width of half maximum ( fwhm ) , sensitivity , carrier life , mobility are researched and contrasted . the result shows that the response speed of detector , time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation . though sensitivity of the detector reduces , its measuring range can be widened
  为了使探测器的性能得到进一步的提高，我们对其进行了电子辐照改性，并测量了本征砷化镓探测器和经过1 . 7mev电子辐照的探测器的暗电流、光电流及对x射线的脉冲响应，并对其响应时间，后沿下降时间，半高宽( fwhm ) ，载流子寿命，灵敏度进行对比，研究，结果显示经电子辐照后的探测器的性能得到了改善，使响应速度，分辩率进一步提高，并消除了探测器输出信号后沿的非线性，虽灵敏度有所降低，反而使其测量范围得以拓宽。
• The effect of deposited condition , include substrate temperatures , different substrates and annealing on the structural properties of zno films has been studied in considerable detail . it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c , the substrate of sapphire . the sample on this condition is 0 . 3491
  通过分析衬底温度、不同衬底和退火对样品结构的影响，得到了样品的最佳制备条件：衬底温度450 、蓝宝石衬底，此条件下制备的样品具有高度( 002 )取向性， ( 002 )衍射峰半高宽仅仅0 . 3491 ，原子力显微镜( afm )分析表明zno薄膜具有密集堆积的均匀柱状晶粒。
• It is found from the experiment that under the conditions of peak magnetic field of 0 . 57t , beam pulse fwhm ( full width of half maximum ) of 44ns , a microwave radiation pulse with fwhm 25ns and whole width of 35ns is produced , when the intensity of the guiding magnetic field rises , the peak microwave power changes little but the width of the pulse reduces . the a - k gap also has obvious influence on the microwave radiation , the stable and higher microwave output is obtained under suitable gap
  实验中还发现，在峰值磁场0 . 57t和束流半高宽44ns情况下，得到了25ns半高宽和35ns底宽的微波脉冲信号，随着导引磁场增加，微波信号幅值基本不变，但国防科学技术大学研究生院学位论文是微波脉冲宽度会逐步减少;实验中还发现磁场线圈位置有一定的轴向调节范围，说明在磁场轴向分布的一定变化范围内，器件都可以正常工作，这对以后的永磁场系统导引的微波实验有利。
• In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
  Afm 、 xrd以及性能测试结果表明:较低的基片温度有利于形成表面均匀致密的薄膜,且薄膜的表面粗糙度均方根较小;随着基片温度的升高,经过快速退火的plt薄膜的介电常数逐渐增大;相比于传统退火,快速退火缩短了退火时间,提高了薄膜的介电和铁电性能;快速退火随着保温时间的延长,大部分钙钛矿结构的特征峰的峰强增大,半高宽减小,峰形越来越尖锐,但当保温时间为80s的时候, ( 100 )和( 110 )峰的强度有所下降,因此保温时间在60s较为适宜。