半导体激光二极管的英文

• semiconductor laser diode

• "半导体"英文翻译    semiconductor
• "激光"英文翻译    laser
• "二极管"英文翻译    diode; two-electrode valve
• "半导体荧光二极管" 英文翻译 :    semiconductor luminescent diode
• "激光二极管" 英文翻译 :    laserdiode; lasing diode; lasingdiode; ld; lna laser diode; na ase diode
• "半导体激光" 英文翻译 :    semiconductor laser
• "半导体二极管激光器" 英文翻译 :    semiconductor diode laser
• "半导体激光器" 英文翻译 :    junction laser; laser diode; semiconductor laser unit; semiconductorlaser
• "半导体激光头" 英文翻译 :    semiconductor laser head
• "半导体二极管" 英文翻译 :    semi diode; semiconductor deode; semiconductor diode; semidiode
• "金属绝缘膜半导体发光二极管" 英文翻译 :    metal insulator semiconductor light emitting diod
• "长波长激光二极管" 英文翻译 :    long wavelength laser diode
• "大功率激光二极管" 英文翻译 :    high power laser diode
• "大光腔激光二极管" 英文翻译 :    large optical-cavity laser diode
• "单模激光二极管" 英文翻译 :    single mode laser diode
• "单频激光二极管" 英文翻译 :    single frequency laser diode
• "堆垛激光二极管" 英文翻译 :    stacked laser diode
• "多极激光二极管" 英文翻译 :    multi-electrode laser diode
• "多模激光二极管" 英文翻译 :    multimode laser diode
• "激光二极管测量仪" 英文翻译 :    laser diode tester
• "激光二极管放大器" 英文翻译 :    laser diode amplifier
• "激光二极管激励器" 英文翻译 :    laser diode driver
• "激光二极管检测器" 英文翻译 :    laser diode detector
• "激光二极管解调器" 英文翻译 :    laser diode demodulator
• "激光二极管矩阵" 英文翻译 :    laser diodes matrix

• Blank detail specification for semiconductor laser diodes
  半导体激光二极管空白详细规范
• Detail specification for semiconductor laser diode modules for type gj1325
  Gj1325半导体激光二极管组件详细规范
• Semiconductor optoelectronic devices . detail specification for types gj9031t and gj9032t and gj9034t semiconductor laser diodes
  半导体光电子器件. gj9031t gj9032t和gj9034t型半导体激光二极管.详细规范
• It has a broader absorption band at 808 nm which is emitted by laser diode ( ld ) . therefore , nd : cngg is suitable for ld pumping , the ld pumped all solid - state lasers can be made by using nd : cngg . in this study , nd : cngg single crystals of 25mm in diameter and above 80mm in length were successfully grown by the automatically pulling method from the melt
  掺钕钙铌镓石榴石(简称nd : cngg )是一种新型激光晶体,该晶体熔点低( 1470 ) ,具有无序结构,在通用的808nm半导体激光二极管( ld )发射波长区有宽吸收带,因此很适合ld泵浦,可做成ld泵浦全固态激光器。
• Because quasi - fermi levels of a laser diode ( ld ) vary with the carrier density , it is predicted that a new type of hysteresis loop should occur for the current passing ld while a hysteresis loop appears on the power - frequency curve of the ecld . an explicit analytical expression for the frequency width of the hysteresis loop and the condition for the formation of the hysreresis loop has been deduced
  预测了由于半导体激光二极管( ld )的准费米能级之差随ld内线流子密度的变化而变化，因而，在调谐外腔半导体激光器的输出功率?振荡频率曲线上出现双稳环的时候，通过ld的电流也应出现一个伴随的新型双稳环? ?电流双稳环。
• The technical breakthroughs in growth of nd : cngg had been made . in particular , continuous laser operation was achieved from nd : cngg pumped by ld . when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength , the cw laser output power of 123 . 1 mw was obtained with slope efficiency of 22 . 3 %
  本论文用自动化熔体提拉技术成功生长出< 111 >方向的直径25mm以上,长度80mm以上的平界面无核心nd : cngg单晶,确定了晶体结构和物相,测量了晶体的光谱性能,晶体消光比达到34db ,晶体生长技术有新的突破,实现了连续激光运转,用单支807nm半导体激光二极管端面泵浦该晶体片子,在国内首次获得123 . 1mw的1 . 062 m连续激光输出,斜效率达22 . 3 % 。
• Based on the rate - equation theory of four - level system , the expressions of threshold pump power , output power and slope efficiency are given . the influence of space distribution of pump light ( the position of focusing point , dimension of pumping light and divergence angle ) to the output characteristics are also discussed . then , by investigating the effects of thermal effect of laser crystal on the size of laser cavity mode , we obtain the mode - matching principle of high power laser diode end - pumped solid - state lasers
  其中，在泵浦光的空间分布变量中我们分别考虑了泵浦光聚焦后的腰斑大小、聚焦腰斑在增益介质中的位置以及泵浦光在介质中发散角的影响；然后我们研究了在高泵浦功率下激光晶体因吸收泵浦光而产生的热效应所导致的热透镜效应以及热致衍射损耗，通过分析它们对振荡激光腔模尺寸的影响，得到了高功率半导体激光二极管端面泵浦固体激光器模式匹配的要求，为高功率连续单频nd ： yvo _ 4激光器的优化设计提供了理论依据。