化学气相淀积的英文

• chemical vapor ceposition
• chemical vapor deposition
• chemical vapour ceposition
• cvd

• "化学"英文翻译    energy
• "气"英文翻译    gas
• "相"英文翻译    looks; appearance
• "淀积"英文翻译    deposition; sedimentation; i ...
• "低压化学气相淀积" 英文翻译 :    lpcvd
• "化学气相淀积法" 英文翻译 :    pcvd
• "化学气相淀积工艺" 英文翻译 :    chemical vapor deposition method
• "等离子体增强化学气相淀积" 英文翻译 :    plasma-enhanced cvd
• "常压化学气相淀集" 英文翻译 :    apcvd
• "气相淀积" 英文翻译 :    gas deposition; gas plating; vapor deposition
• "气相淀积法 汽相淀积" 英文翻译 :    vapourdeposition
• "物理气相淀积" 英文翻译 :    pvd
• "化学汽相淀积" 英文翻译 :    chemical vapor deposition (cvd); chemical vapour deposition; chemical vopour deposition; cvd
• "化学气相沉淀" 英文翻译 :    cvd
• "化学气相沉积" 英文翻译 :    chemical vapor deposition process; cvd process
• "常压化学汽相淀积" 英文翻译 :    apcvd; atmospheric pressure chemical vapor deposition
• "低压化学汽相淀积" 英文翻译 :    low pressure chemical vapor deposition; lpcvd
• "高温化学汽相淀积" 英文翻译 :    high temperature chemical vapor deposition
• "硅烷化学汽相淀积" 英文翻译 :    silane cvd
• "化学汽相淀积光纤" 英文翻译 :    cvd fiber
• "化学汽相淀积硅" 英文翻译 :    cvd silicon
• "化学汽相淀积膜" 英文翻译 :    chemical vapor deposition film
• "激光化学汽相淀积" 英文翻译 :    lcvd laser chemical vapor deposition
• "减压化学汽相淀积" 英文翻译 :    reduced pressure chemical vapor deposition
• "热化学汽相淀积" 英文翻译 :    thermal cvd

• The higher value is comparable to those obtained in cvd epitaxy .
  这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
• Particulates can emanate from process equipment (e.g., in cvd and etch reactors)as well as from humans (from street clothes, skin flakes, etc. )
  尘粒也能由工艺设备（如化学气相淀积和刻蚀反应器）以及工作人员（身穿的外套，体表的皮屑等）而产生。
• In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully .
  和化学气相淀积工艺相反，虽然在操作中对于固体砷还是必须非常小心掌握，但是，分子束外延不需要庞大的安定保险装置。
• Generic specification of low pressure chemical vapor deposition system
  低压化学气相淀积设备通用技术条件
• Chemical vapour deposition
  和化学气相淀积
• 4 . investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation , respectively
  4 .分别对300 c下采用等离子体增强化学气相淀积( pecvd )和700 ~ 800 c下采用热氧化技术制备sigehmos器件栅介质薄膜进行了研究。
• In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
  本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。
• So we applied low temperature techniques to manufacture the sense film of qcm sensors . at low temperature and low pressure , with n - butylamine as the carbon source material , and with dry hydrogen as the carrying gas , we applied r . f . glow discharge plasma to preparation the working film for the qcm sensors
  在“实验与分析”一章中较为详细地阐述了采用等离子体化学气相淀积的方法，以正丁胺作为碳源物质，通过射频辉光放电在低温低压条件下制得了正丁胺等离子体淀积膜。
• Sige simox ; 3 . sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen . sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ) , gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies
  Sige薄膜生长方面：在熟悉各种薄膜外延技术的基础上，采用了近年来发展较为成熟的固态源分子束外延( ssmbe ) 、气-固态源分子束外延( gsmbe ) 、超高真空化学气相淀积( uhvcvd )三种sige薄膜外延技术，在硅( 100 )衬底上外延生长了sige薄膜。