功率增大的英文

• power augmentation

• "功率"英文翻译    power; rate of work; capacit ...
• "功率增长" 英文翻译 :    slash up
• "功率增长值" 英文翻译 :    power increment
• "功率增加" 英文翻译 :    increase of power
• "功率增升器" 英文翻译 :    power booster
• "功率增益" 英文翻译 :    power gain
• "功率增值" 英文翻译 :    added power
• "零功率增益" 英文翻译 :    zero-power-gain
• "蒸发率增大系数" 英文翻译 :    evaporation rate gain
• "增大功率" 英文翻译 :    application power approach; apply power; deliver a power; gain power; get on the power; push up power
• "额定功率增益" 英文翻译 :    nominal power gain
• "功率增益函数" 英文翻译 :    power gain function
• "功率增益天线" 英文翻译 :    power gain antenna
• "换能器功率增" 英文翻译 :    transducer power
• "可用功率增益" 英文翻译 :    available power gain
• "匹配功率增益" 英文翻译 :    matched power gain
• "输出功率增量" 英文翻译 :    incremental delivered power
• "瞬时功率增加" 英文翻译 :    momentary high power effort; momentary high-power effort; momentary minimum discharge
• "天线功率增益" 英文翻译 :    antenna power gain
• "相对功率增益" 英文翻译 :    relative power gain
• "有效功率增益" 英文翻译 :    available gain power
• "有用功率增益" 英文翻译 :    available power gain
• "大讯号功率增益" 英文翻译 :    large-signal power gain
• "反应堆功率增长" 英文翻译 :    reactor up; reactor-up
• "功率增益测量仪" 英文翻译 :    power gain tester

• Cm3 and it would increase with the increased deposition power
  并且其密度随着沉积功率增大而增加。
• But the disorder degree of structure decreased alongside the increase of deposition power
  随着沉积功率增大，掺胺碳膜网络结构中原子排列的有序度增大而无序度减少。
• The ir spectrum showed that there existed amino - group in the network structure of ctc : h film decreased along with the increase of deposition power
  薄膜样品的红外光谱分析结果表明，胺基团已被成功掺入薄膜的网络结构中。并且薄膜中胺基团含量随着沉积功率增大而减少。
• When the sputtering power is lower than 300 w the sputtering rate increases slowly ; when the sputtering power is higher than 300 w the sputtering rate increases rapidly , so there exists a threshold
  但在300w以下，溅射功率增大，溅射速率增加较慢；当功率大于300w后，溅射速率增大变快，即存在一“阈值” 。
• How sputtering power , substrate temperature and gas flow influenced the properties of cohesion are studied . results show that the increase of sputtering power has positive affection
  研究了溅射功率、衬底温度和气体流量对cu ag薄膜与cdznte衬底的附着性能的影响，发现溅射功率增大对薄膜的附着性能有积极作用。
• The experiments indicate that the deposition rate will increase with the increase of the flow ratio of sihu / nhs , slightly decrease with the increase of substrate temperate , and increase obviously with the increase of rf power
  氮化硅薄膜的折射率随硅烷氨气流量比增大而增大，随温度升高而略有增加，随淀积功率增大而略为降低。
• By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia , silicon nitride thin film with excellent anti - reflective and passivation effects was prepared . the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated . the effects of substrate temperature , the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched
  实验表明，氮化硅薄膜的沉积速率随硅烷氨气流量比增大而增大，随温度升高而略有降低，随淀积功率增大而明显增加；在衬底温度300 ，射频功率20w和硅烷氨气流量比为1 ： 3的条件下氮化硅薄膜的沉积速率大约为8 . 6纳米分。