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功率半导体器件的英文

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"功率半导体器件"怎么读用"功率半导体器件"造句

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  • power semiconductor devices

例句与用法

  • China agenc of fuji electric semiconductor & hitachi capacitor
    日本富士电机功率半导体器件、日本日立电容器中国代理。
  • And this will contribute to the study and development of the power semiconductor device research in our country
    这对于我国功率半导体器件领域的研究与发展具有着重要的理论意义和实际意义。
  • As the core technology of the electronic ballast , the control and driver ics become the most important thing we can make effort to do together with the power devices
    而作为电子镇流器的核心,其控制驱动芯片和功率半导体器件在国内还未进入产业化的实用阶段。
  • To improve these models , based on detailed mechanism analysis , high frequency models of two typical power devices - double carriers pin diodes and single carrier power mosfet are proposed for emi simulation
    本文对典型的两种功率半导体器件?少子器件pin二极管和多子器件功率vdmosfet ,进行了深入地机理分析,提出了它们适合于emi分析的高频模型。
  • A lot of works has been done to reduce the reverse recovery time and improve the general performance in the international power devices ’ research field . they focus on the design of device structure and lifetime controlling technologies
    围绕着如何减下frd的反向恢复时间、提高综合性能,国际功率半导体器件领域进行了广泛的探讨,热点集中在了器件结构设计和寿命控制等技术上,其中又以寿命控制技术为为主要焦点。
  • The technology for three - phase cycloconverter has broad background in industry application . the common mode of its usage is to convert the shapes of electronic energy with power transistor elements . the conversion of the shapes of the electronic energy include amplitudes , frequencies , and forms of the voltage or current which can make the shapes of electronic energy suitable for different kinds of electronic equipments
    三相交-交变频电源技术是一门应用性很强的技术,其应用的主要方式就是采用功率半导体器件,对电能进行变换?包括电压和电流的幅值、频率和波形等方面的变换,以达到使电能更好地符合各种不同用电设备的要求。
  • This dissertation focuses on modeling technique of electromagnetic interference ( emi ) for power converters . it includes following modeling works for : power semiconductors , passive component , printed circuit board ( pcb ) , conducted emi , and radiated emi of power converters . the existing high frequency models of power semiconductors are n ' t so accurate that they ca n ' t be applied in conducted emi simulation
    本文主要致力于功率变换器电磁干扰( emi )建模技术的研究,内容涉及到功率半导体器件、无源器件、 pcb板的高频建模、功率变换器传导emi和辐射emi的建模各个方面,从而系统和深入地探讨和阐述了功率变换器emi的问题及建模技术。
  • Characterized by wide band gap , high breakage electric field , high thermal conductivity , high saturated electron mobility , cubic silicon carbide ( 3c - sic ) , considered as one of the most promising wide band gap semiconductors , is widely utilized in high temperature , high frequency and large power semiconductor devices
    3c - sic被誉为最有潜力的宽禁带半导体材料,具有带隙宽、临界击穿电场高、热导率高、饱和电子漂移速度大等优点,是高温、高频、高功率半导体器件的首选材料。
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