六方结构的英文

• hexagonal structure

• "六"英文翻译    a surname
• "方"英文翻译    square
• "结构"英文翻译    structure; composition; cons ...
• "密排六方结构" 英文翻译 :    close-packed hexagonal structure; hexagonal close packed structure
• "密排六方结构金属" 英文翻译 :    hexagonal close-packed metals
• "立方结构" 英文翻译 :    cubic structure
• "三方结构" 英文翻译 :    tripartite structure
• "斜方结构" 英文翻译 :    orthorhombic structure
• "复杂立方结构" 英文翻译 :    complex cubic structure
• "面心立方结构" 英文翻译 :    face centered cubic structure; face centred cubic structure; face-centered cubic (fcc); face-centered cubic structure; face-centred cubic structure; fcc structure
• "体心立方结构" 英文翻译 :    body centered cubic structure; body-centered cubic (bcc); body-centered cubic structure
• "体心四方结构" 英文翻译 :    body centred tetragonal structure
• "方结" 英文翻译 :    katai; reef knot; sailor knot; square knot; square tie
• "金刚石立方结构" 英文翻译 :    diamond cubic structure
• "立方结构的铁氧体" 英文翻译 :    ferroxcube
• "立方结构铁淦氧" 英文翻译 :    ferroxcube
• "体心立方结构相" 英文翻译 :    body centred cubic phase
• "六方晶系结构" 英文翻译 :    hexagonal structure
• "六方紧密堆积结构" 英文翻译 :    hexagonal close-packed structure
• "六方品系石墨结构" 英文翻译 :    h―bn
• "六方" 英文翻译 :    allen key; hexagon spanner; hexagonal; mutsukata
• "六方品系纤锌矿结构" 英文翻译 :    w―bn
• "六方最紧密堆积结构" 英文翻译 :    hexagonal close-packed structure
• "反结,方结," 英文翻译 :    reefknot
• "方结点" 英文翻译 :    square node

• Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure
  氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3 . 3ev 。
• Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
  氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。
• Zinc oxide as a wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure , is gaining importance for the possible application as a semiconductor laser , due to its ultraviolet emission at room temperature
  宽禁带zno半导体为直接带隙材料，具有六方结构，较高的激子束缚能( 60mev ) ，室温下带隙宽度为3 . 3ev 。
• In this paper , accordiflg to the working pri nci p1es of devi cg , we design the struc ture narameter of device , and then the hexagona1 and cubic gan epitaxial layers were grown . on sapp1re and gaas substrates respect ive1y . as a resu1 t , we have fabricated gan - - based msm uv photodetectors , the responsi vity of device reach 0
  本文依据msm结构探测器的工作原理，设计了器件的结构参数，并分别以蓝宝石和gaas为衬底材料生长了六方结构和四方结构的gan材料，在此基础上制备出gan - msm紫外光探测器，并取得了一些有意义的结果，我们的器件光响应度最好可达0 . 21a w 。
• The conclusions are reported as following : the structure change of triuranium octaoxide ( u3o8 ) was studied by xrd at ambient atmosphere at temperature form 25 to 850 . there are two kind of phases of u3o8 in the temperature range studied , and the transformation temperature is about 300 . the low temperature phase is orthorhombic with space group amm2 , and it change to another phase with better symmetry around 300
  主要的研究结果如下：对u _ 3o _ 8的相变和结构随温度的变化进行的分析研究结果显示：在300附近u _ 3o _ 8发生了相变，由底心正交结构(空间群为amm2 )的低温相转变为简单六方结构(空间群为p - 62m )的高温相。
• Even though hms can be prepared much more easily than mcm - 41 and has certain advantages such as thicker framework walls , superior thermals stability , and a smaller crystalline size . hms have more recently been shown to possess wormhole - like or sponge - like framework structure rather than the long - range hexagonal framework structures characteristics of electrostatically assembled mcm - 41 . the wormhole channel motif is a potentially important structure feature for favorable catalytic reactivity , in part , because channel branching within the framework can facilitate access to reactive sites on the framework walls . furthermore the wormhole channel motif suggest that they could serves as ideal hosts for rational nanomanufacturing
  1995年， tanev和pinnavaia报道，用中性模板剂合成了一类新的六方介孔固体( hms ) ，它具有不同于用静电路径合成的mcm - 41介孔固体的物理和化学性能，如制备工艺简单、孔壁厚、热稳定性好和晶粒尺寸小等。 hms还具有蜂巢或海绵状结构特征，而不象mcm - 41那样是长程有序的六方结构。这种蜂巢或海绵状结构特征除有利于催化反应，反应物易于接近孔壁上的反应位外。
• Pure cdte films have high electrical resistivity and are slightly p - type , due to the formation of cd vacancies in the cdte lattice acting as acceptor centers . the sheet resistivity of films are about 1010 ? / ? . the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v . s . the structural and electrical properties of cdte films doped te are markedly different from pure cdte films
  ，面载流子浓度约105 - 6 / cm2 ，载流子迁移率为几百cm2 / v . s ；掺杂te元素后，薄膜衍射峰强增大，薄膜结构上出现了第二种相成分?六方结构的te ，由衍射峰强判断该相比例较小，同时cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常数增大。
• The results of mas nmr analysis indicate that the crystalline structure of cordierite was considerably changed by the incorporation of the zn2 ions or ti " " ions , leading to the partial transition from a - cordierite with a hexagonal crystalline structure to p - cordierite with a orthorhombic crystalline structure
  2al2o3 ? 4 . 6sio2堇青石固溶体样品的结构。 masnmr研究结果表明， zn2 + 、 ti4 -的固溶对样品中的堇青石结构具有重要的影响，使得样品中的堇青石由六方结构-堇青石向四方结构-堇青石转变。