低剂量辐照的英文

• low dose irradiation

• "低"英文翻译    low
• "剂量"英文翻译    dosage; dose; dosis
• "辐照"英文翻译    irradiation; irradiate
• "全剂量辐照" 英文翻译 :    full -scale irradiation
• "低剂量辐射仪" 英文翻译 :    low level gamma radiation meter
• "低剂量" 英文翻译 :    low dose
• "能量辐照" 英文翻译 :    energy irradiation
• "低剂量,小剂量" 英文翻译 :    low dose
• "超低剂量" 英文翻译 :    ultra low-volume
• "超低剂量率" 英文翻译 :    very low dose-rate
• "低剂量的药" 英文翻译 :    an under dose of medicine
• "低剂量接触" 英文翻译 :    low level exposure
• "低剂量率" 英文翻译 :    low dose rate
• "低剂量耐受" 英文翻译 :    low-dose tolerance
• "低剂量照射" 英文翻译 :    low dose exposure; low level irradiation
• "最低剂量" 英文翻译 :    lowest dose level
• "太阳恒量辐照标准" 英文翻译 :    solar-constant irradiance standard
• "超低剂量喷药" 英文翻译 :    ultra-low volume spray
• "低剂量避孕丸" 英文翻译 :    minipill
• "低剂量率插置" 英文翻译 :    low dose rate implant
• "低剂量率照射" 英文翻译 :    low dose rate irradiation
• "低剂量耐受性" 英文翻译 :    low dose tolerance
• "冷点区,低剂量区" 英文翻译 :    cold spot area
• "超低剂量,超小剂量" 英文翻译 :    uld; ultra-low-dose
• "低剂量率剂量计" 英文翻译 :    low level dosimeter

• Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
  低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟
• This research has closed relationship with a wide range of cross - science areas , such as basic research on cancer therapy by heavy ion radiation method , radiation danger level evaluation in space and biological damage induced by long term , low - level dose radiation environment , etc . dna is the carrier of biological information and the main target of biological effects induced by ionizing radiations
  从重离子治癌的基础性和先导性的研究，载人航天飞行过程中的太空辐射危险性评估，到长期在低剂量辐照环境下的放射性对机体损伤等等，都与电离辐射所致生物损伤的研究有着密切的关系。 dna (脱氧核糖核酸)是生命信息的载体，也是辐射生物效应的最主要的靶分子。
• An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry
  该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。