位错密度的英文

• density of dislocations
• dislocation concentration
• dislocation density
• dislocation desity
• epd

• "位"英文翻译    place; location
• "错"英文翻译    wrong; mistaken; erroneous
• "密度"英文翻译    density; thickness
• "活动位错密度" 英文翻译 :    mobile dislocation density
• "砷化镓单晶位错密度的测量方法" 英文翻译 :    gallium arsenide single crystal-determination of dislocation density
• "堆垛层错密度" 英文翻译 :    concentration of stacking faults; stacking fault density
• "堆跺层错密度" 英文翻译 :    concentration of stacking faults
• "位错" 英文翻译 :    bit error; dislocations; linear defects
• "锗单晶位错腐蚀坑密度测量方法" 英文翻译 :    germanium monocrystalinspection of dislocation etch pit densityty
• "密度" 英文翻译 :    1.(密集的程度) density; thickness 火力密度 density of fire; 兵力密度 density of troops; 那个国家的人口密度为每平方英里685人。 the population density of that country is 685 per square mile.2.[物理学] (物体的质量和其体积的比值) density 电流密度 current density; 海水密度 seawater density; 水银的密度比水大得多。 mercury has a much greater density than water.; 密度计 densimeter; densitometer; density gage; density indicator; gravitometer
• "半位错" 英文翻译 :    half-dislocation
• "超位错" 英文翻译 :    dislocation of higher order; super dislocations; superdislocations
• "动位错" 英文翻译 :    moving dislocation
• "反位错" 英文翻译 :    anti-dislocation
• "分位错" 英文翻译 :    partial dislocation
• "负位错" 英文翻译 :    negative dislocation
• "杆位错" 英文翻译 :    pole dislocation
• "环位错" 英文翻译 :    loop dislocation
• "极位错" 英文翻译 :    pole dislocation; poledislocation
• "巨位错" 英文翻译 :    giant dislocation; large dislocation
• "快位错" 英文翻译 :    fast dislocation
• "棱位错" 英文翻译 :    edge dislocations
• "林位错" 英文翻译 :    dislocation tree; tree dislocation
• "螺位错" 英文翻译 :    screw dislocation
• "偏位错" 英文翻译 :    partial dislocation

• Gallium arsenide single crystal - determination of dislocation density
  砷化镓单晶位错密度的测量方法
• There exists a strong correlation between initial surface morphology prior to ht growth and ht gan growth mechanism and eventual threading dislocation density in epilayers
  发现高温生长前样品的表面状态对随后生长的gan生长机制及最终外延层中的位错密度有很大影响。
• In the relatively high dislocation density areas , dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure . here the profile of c concentration in the dimension of a cellular structure is " u " - shaped . the cell diameter increases as the dislocation density decreases , dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure
  发现晶片中位错密度和分布严重影响碳的微区分布，高密度位错区，位错形成较小的胞状结构，胞内无孤立位错，碳在单个胞内呈u型分布；较低密度位错区，胞状结构直径较大，胞内存在孤立位错，碳在单个胞内呈w型分布。
• We studied the effect of laser quenching ( harden by phase transformation ) on some representative mould steels . through measuring the rigidity on the surface of samples treated by laser heat treatment , and through photographing microstructures of the steel surface , we find many reasons attribute to high hardness . these reasons include ultra - fine grains , high density dislocation and more content of carbon in martensite
  我们研究的是激光淬火对几种典型模具钢的作用，通过对热处理后的试样的硬度分布的测定，用金相和电镜观察金相组织的变化，认为激光热处理产生高硬度的原因是晶粒细化、高的位错密度和高的马氏体含量。
• The experimental results showed that firstly , the distribution of resistiveity , mobility , carrier concentration , epd and ab - epd in gaas substrate was not uniform ; secondly , the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly , mesfet devices performance correlated with ab microdefects ; last , as shown by pl mapping results , it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
  实验结果表明， lecsi - gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab - epd 、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高， pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。
• As recent research and productive practice showed , such conventional parameters as dislocation densiry ( epd ) , charge carrier concentration , mobility were not enough to evaluate the si - gaas material ' s quality , let alone revealing the relationship between the quality of material and the performance of devices . on the other hand , recent research showed that ab microdefects had direct relationship with device performance , whose density ( ab - epd ) was more important than epd for revealing the relationship between the quality of material and the performance of devices
  近些年来的科研和生产实践均表明，现行的常规参数，如位错密度、载流子浓度、迁移率等对表征半绝缘砷化镓材料的质量是不充分的，特别是不能反映材料质量与器件性能之间的关系。近期的科研成果证明， ab微缺陷与器件性能有直接的关系，而且ab微缺陷密度( ab - epd )是比位错密度更加敏感、更加重要的参数。

• 位错密度的日语：てんいのうど