亚阈值的英文

• subthreshold

• "阈值"英文翻译    threshold; threshold value
• "亚阈值活性增强" 英文翻译 :    enhancement of subthreshold activity
• "亚阈的" 英文翻译 :    subthreshold; sulethreshold
• "亚阈能" 英文翻译 :    subthreshold
• "阈值" 英文翻译 :    threshold; threshold value
• "超阈值" 英文翻译 :    superthreshold
• "次阈值" 英文翻译 :    subthreshold
• "低限；阈值" 英文翻译 :    threshold
• "高阈值" 英文翻译 :    high threshold◇高阈值逻辑 high threshold logic; 高阈值逻辑电路 high threshold logic circuit
• "门限,阈值" 英文翻译 :    threshold
• "门阈值" 英文翻译 :    gate threshold
• "取阈值" 英文翻译 :    thresholding
• "痛阈值" 英文翻译 :    threshold of pain
• "嗅阈值" 英文翻译 :    olfact; threshold odor number
• "阈值，界限" 英文翻译 :    threshold
• "阈值量" 英文翻译 :    threshold quantity
• "阈值门" 英文翻译 :    threshold gate
• "阈值信" 英文翻译 :    threshold signal to noise ratio; threshold signal-to-noise ratio
• "r波阈值" 英文翻译 :    r-wave threshold
• "①合格数目②阈值" 英文翻译 :    ghreshold numbers
• "摆脱阈值" 英文翻译 :    threshold of let-go current
• "半阈值逻辑" 英文翻译 :    semi-threshold logic
• "泵激阈值" 英文翻译 :    pumping threshold
• "泵浦阈值" 英文翻译 :    pumping threshold
• "变阈值角码" 英文翻译 :    variable-threshold decoding

• Under self - heating stress , a general degradation in subthreshold characteristic was observed , which is the consequence of defect generation along overall channel
  这主要是由于在自加热应力下,整个沟道中都出现了缺陷态的产生,从而使器件的亚阈值摆幅发生了退化。
• Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
  利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法
• The character of threshold voltage in vlsi circuit is analyzed . it can make a serious effect on power dissipation and performance . an algorithm based on partition is designed to choose the most favorable working voltage and threshold
  在低电压电路中，既要使电路实现正常的开关，又必须限制延时和亚阈值漏电流的急剧增加，就必须认真地选择工作电压和阈值电压。
• The dominance and properties of the cmos integrated reference were also described , and the research meaning was pointed out . related device theory and process model used in design were described . the temperature related model and the influencing factor of two active devices , subthreshold mosfet and pnp substrate transistor , based on cmos process were analyzed and compared , and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference
  阐述了设计中相关的器件理论与工艺模型,对cmos工艺下的两种有源器件,即亚阈值工作状态下的金属场效应晶体管( mosfet )及衬底pnp双极型晶体管( bjt )的温度模型及其影响因素进行了分析和比较,指明衬底pnp双极型晶体管更适合作为基准源的温度补偿元件。
• After introduction of the tranlinear loop principal , the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower . as for modern integrated circuit , the model of mos transistor , the active resistance and the current mirror integrated circuit formed by mos transistor are introduced . the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation
  针对现代集成电路的工艺,本文对mos晶体管的工作原理进行了简要的叙述,讨论了有源电阻和电流镜的实现方法,并利用mos晶体管的亚阈值特性组成混合跨导线性回路完成对应的电压跟随器的设计,推导出了基于cmos技术的电流控制传送器。