二次氧化的英文

• reoxidation

• "二次"英文翻译    secondary; quadratic
• "氧化"英文翻译    oxidize; oxidate; oxide; bur ...
• "初次氧化皮" 英文翻译 :    primary scales
• "次氧化物" 英文翻译 :    suboxide
• "一次氧化皮" 英文翻译 :    furnace scale
• "再次氧化" 英文翻译 :    reoxidation
• "次氧化铋晶体" 英文翻译 :    bismuth suboxide crystals
• "二次" 英文翻译 :    secondary; [数学] quadratic
• "二次煅烧的白云石加氧化铁" 英文翻译 :    double-burned dolomite
• "氧化" 英文翻译 :    [化学] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
• "第二次" 英文翻译 :    second time 第二次答辩 rejoin; rejoinder; 第二次扣押 second distress; 第二次申诉 repleader
• "二次泵" 英文翻译 :    secondary pump
• "二次波" 英文翻译 :    secondaries
• "二次侧" 英文翻译 :    secondaly side; secondalyside; secondary side
• "二次差" 英文翻译 :    second difference
• "二次场" 英文翻译 :    secondary field
• "二次簇" 英文翻译 :    secondary cluster
• "二次的" 英文翻译 :    binary; qadratic; quadrate; quadratic; quadric; secondary; twofold
• "二次方" 英文翻译 :    square
• "二次风" 英文翻译 :    air envelope; secondary air; secondary draft; secondary-air
• "二次根" 英文翻译 :    square root
• "二次灌" 英文翻译 :    secondary grout
• "二次花" 英文翻译 :    reflorescence
• "二次矩" 英文翻译 :    second moment
• "二次理" 英文翻译 :    quadratic irrational

• Then aligned carbon nanotube was grown on aao films . for one - step oxidation films , bamboo - shaped nanotubes were formed
  然后在一次氧化和二次氧化的aao模板上沉积钴催化剂，用cvd法生长了纳米碳管。
• The diameter distribution of one - step anodic oxidation is even , but the shape of the holes is not uniform while it becomes better afer second oxidation for 20min
  一次氧化得到的aao模板孔径均匀，但分布和形状不规则，二次氧化20min有所改善。 40 ， 50v得到的结果较好。
• All the experiment analyses are presented in chapter 3 , including the lodging of negative resistance effect based on the measurement of the parameters of ga - diffusion trans
  结构中近硅表面微区域浓度的变化规律， ga扩散过程的三个阶段包括预沉积、再分布和二次氧化，对应于ga在a
• The experimental instruments , apparatus and the means to prepare all the samples are introduced in the first section . in section 2 , the experimental system including the oxidization system and diffusion system , are introduced therein . in section 3 , the samples preparation including the pre - deposition , redistribution and re - oxidization , the samples of b doping , and the fabrication of ga - diffusion transistor , b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein , and the as - prepared samples are analyzed by sims , srp and four point probe
  首先介绍了制备各种样品所用的实验仪器、设备与方法；第二节中介绍了实验系统，包括氧化系统、扩散系统，第三节介绍了样品的制备，包括ga的预沉积、再分布、二次氧化样品，扩硼样品，以及扩嫁晶体管、扩硼晶体管和扩镰后再补充扩硼晶体管的制备流程；实验所得样品，借助二次离子质谱（ sims ） 、扩展电阻（ srp ） 、四探针薄层电阻等先进的测试分析方法进行分析。