三元化合物的英文

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"三元化合物"怎么读用"三元化合物"造句

英文翻译手机版

ternary compound

"化合物"英文翻译 chemical compound; compound
"三元化合物半导体" 英文翻译 : ternary semiconductor
"三元化合物结构" 英文翻译 : ternary compound structure
"二元化合物" 英文翻译 : binary compound; binary compund
"四元化合物" 英文翻译 : quaternary compound
"二元化合物半导体" 英文翻译 : binary compound semiconductor; binary semiconductor
"三元化工公司" 英文翻译 : sam won chemical ind. co., ltd
"碳环化合物三元环和四元环" 英文翻译 : carbocyclic compounds three-and four membered rings
"三元混合物" 英文翻译 : ternary mixture; tertiary mixture
"三元络合物" 英文翻译 : ternary complex
"化合物" 英文翻译 : chemical compound; compound 高分子化合物 high polymer; highly polymerized compound
"化合物a" 英文翻译 : compd a
"化合物s" 英文翻译 : compd s; compound s; desoxycor tisone
"化合物,复合物" 英文翻译 : compound
"环化合物, 闭链化合物" 英文翻译 : cyclic compound
"母化合物；亲体化合物" 英文翻译 : parent compound
"化合物混合物" 英文翻译 : compound
"氨化合物" 英文翻译 : ammonium compound
"氨基化合物" 英文翻译 : amide; amino compound; amino-compound
"氨类化合物" 英文翻译 : ammoniacal compounds
"安定化合物" 英文翻译 : stable compound
"胺类化合物" 英文翻译 : amine-group compound
"八环化合物" 英文翻译 : cctocyclic compound
"半水化合物" 英文翻译 : hemihydrate
"包藏（容）化合物" 英文翻译 : inclusion compound

例句与用法

Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature
碲锌镉( cd _ ( 1 - x ) zn _ xte ，简写czt )单晶体是一种性能优异的三元化合物半导体室温核辐射探测器材料，具有闪锌矿型的面心立方结构。
Compared with the ti3sic2 and ti2alc , which have been studied in detail , ti3ajc2 has not been extensively investigated owing to the fact that ti3alc2 is a relatively new member of this family and the synthesis of ti3alc2 is very difficult
作为其中最近才发现的一种新化合物，与另两种三元化合物ti _ 3sic _ 2和ti _ 2alc相比，对ti _ 3alc _ 2得到的研究要少的多。
In succession , tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering , and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber . in addition , the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ) , and the ti content in the film is approximately 51at %
按照改进的工艺参数，在单晶硅衬底上溅射-淀积了tini薄膜，并进行了超高真空退火， dsc法测得其马氏体逆相变峰值温度为72 ，利用能谱分析( eds )技术测得其ti含量约为51at ，通过对非晶tini薄膜与单晶硅衬底之间的界面进行eds及x射线衍射( xrd )分析，发现在用大功率( 2000w )直流磁控溅射法制备tini薄膜过程中，存在ti 、 ni与si的双向扩散，发生了界面反应，并有三元化合物ni _ 3ti _ 2si生成。