varactor造句

• Varactor diode parametric amplifier
  变容二极管参量放大器
• Analytic expression of capacitance characteristic of voltage - operated varactor
  压控变容二极管电容特性的解析表达式
• Varactor tuned oscillator
  变容二极管党振荡器
• Gaas varactor diode
  砷化镓可变电抗二极管
• Semiconductor discrete device . detail specification for gaas varactor diodes for 2ec600 series
  半导体分立器件. 2ec600系列砷化镓变容二极管详细规范
• Semiconductor discrete device . detail specification for silicon tuning varactor diode for type 2cc51e
  半导体分立器件. 2cc51e型硅电调变容二极管详细规范
• Utilizing the benefits of varactor and bowtie and fractal structures , some interesting characteristics of these elements were found
  该结构单元为设计宽频带、动态方向图扫描的阵列反射天线奠定了基础。
• 3 . a 4 . 2ghz vco tuned by an accumulation - mode mos varactor in tsmc 0 . 35 m sige bicmos process is obtained after debugging with the simulator spectrerf
  3 .基于tsmc的0 . 35微米锗硅bicmos工艺,采用spectrerf仿真器进行压控振荡器的调试和仿真。
• While simulating the resonant circuits , we finished a microstrip resonance , which has high q - factor and fits to design w - band low phase noise oscillators . select beam lead hyperabrupt junction varactor and gunn die made in china as vco ’ s frequency turning component and minus resistance
  此外,文中还对w频段微带结构直流偏置网络、微带波导过渡等外围电路进行了仿真优化,设计方法和结论对毫米波微带电路设计具有通用的参考价值。
• On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range
  3 .由于lc压控振荡器中的pn结变容管品质因数低、调谐范围小,本次设计的lc压控振荡器采用了强反型mos变容管,仿真结果表明,所设计的lc压控振荡器具有15 %调谐范围。
• It also gives the motive of the ka - band vco and mixer , associated with the subject ' s requirement and the realistic conditions , according to which a proposal is confirmed that the gunn diode and the varactor are mounted in the same cavity to fulfill the vco and an antiparallel diode pair is used to fulfill the harmonic mixer . in chapter 2 , based on the basic theory of negative resistance oscillating , we analyses the gunn oscillator and it ’ s tuning character . chapter 3 introduces the theory of millimeter - wave harmonic mixer
  以此为根据结合课题需要和实验室的实际条件,确定vco采用耿氏管腔体振荡器形式,变容管与耿氏管安装在同一个腔内以进一步减小体积,采用反向并联二极管实现谐波混频;第二章介绍负阻振荡器理论及其调谐原理;第三章介绍毫米波谐波混频器基本原理;第四章给出了振荡器及谐波混频器的设计过程,整个组件联调的结果;最后是结束语,分析了电路中存在的问题,指出了改进方向。
• Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied . the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too . the accumulation - mode varactor , which has a higher quality factor value than the inversion - mode mos varactor , is studied in detail
  研究电感和变容管这两种射频集成无源器件的寄生效应和射频mos晶体管的热噪声模型,提出集成电感的设计原则和优化方法,详细研究了一种新型的积累型mos可变电容,这种积累型mos变容管比一般的反型mos变容管有更高的品质因数。
• It is presented that the theory and the manufacturing technology of such analog phase shifter , which are made from conventional 3db quadrature hybrids coupler with two identical varactor - diode networks to provide a shifted phase that varies continuously with biased dc voltage . several analog phase shifters have been made for different operating frequencies . each phase shifter has phase range more than 180 , return loss better than - 20db , insertion loss 4 . 8db including 3db attenuator , transmission difference less than0 . 075 db . computer code phases . bas can present the referenced component values
  介绍了利用铁氧体磁环制作窄带3db耦合器的原理和方法，详细分析了利用此耦合器设计制作模拟压控移相器的理论和制作技巧，以及所制作的多种频率的压控移相器的测试技术指标和实际运行情况。