In this design , the double graded doping solar cell accumulates the minority carriers with the drift field , which is located at the whole graded space . this means that the accumulation of minority carriers doesn ’ t depend on the above conditions
We define the recombination time of excess electrons in p field as the minority carrier lifetime . in theory , we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover , the effect of capacitance to general open - circuit voltage is also investigated . both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells , which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
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