photolithography造句

• Analysis of nanometrology and atom photolithography
  纳米计量与原子光刻技术分析
• Why not use photolithography to make nanostructures
  为什麽不使用光蚀刻法制造奈米结构？
• Recent progress in photolithography technology
  光刻技术及其新进展
• 1 photolithography : forming electrodes in the form required on the ito film
  1光刻：在ito表面形成要求形状的电极。
• Alignment precision - displacement of patterns that occurs during the photolithography process
  套准精度-在光刻工艺中精的形图移转度。
• Alignment precision - displacement of patterns that occurs during the photolithography process
  套准精度-在光刻工艺中转移图形的精度。
• Various technical improvements have made it possible to push the limits of photolithography
  各种技术若能改进，便可推进光蚀刻法的极限。
• The beam division method in maskless laser interference photolithography can be divided into wave - front division and amplitude division
  摘要无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。
• So it is urgent to develop the wavefront engineering , and find a new technology to improve the resolution in photolithography
  因此，有必要拓宽波前工程学的研究内容，发展光刻分辨率增强新技术和新方法。
• Photolithography then reduces the size of the pattern in a process analogous to that used in a photographic darkroom [ see illustration on opposite page ]
  接著，光蚀刻法用一种类似照相暗房中进行的过程（见右页图） ，把图案的尺寸缩小。
• Premium wafer - a wafer that can be used for particle counting , measuring pattern resolution in the photolithography process , and metal contamination monitoring
  测试晶圆片-影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。
• Lectures and laboratory sessions focus on basic processing techniques such as diffusion , oxidation , photolithography , chemical vapor deposition , and more
  课堂讲授和实验课重点介绍了基本制程技术，如扩散、氧化、光刻、化学气相沉积等。
• At the part of experiment , we study the wet - etching technique of glass substrate , based on semiconductor process , which includes photolithography and etching
  实验部分研究了基于半导体工艺的玻璃湿法刻蚀技术。包括玻璃面板上的光刻和刻蚀。
• Lectures and laboratory sessions focus on basic processing techniques such as diffusion , oxidation , photolithography , chemical vapor deposition , and more
  课堂讲授和实验课重点介绍了基本的工艺技术，如扩散、氧化、光刻、化学汽相淀积以及其它。
• The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer
  最常用的步骤是用光蚀刻或电子束蚀刻法，在矽晶圆表面的光阻层上制作出图案。
• The impact of the effective resist diffusion length to the exposure latitude and mef ( mask error factor ) for the 0 . 13 m photolithography and beyond is presented
  展示了在0 . 13 m及以下工艺中等效扩散对能量裕度和掩模版误差因子的影响的研究结果。
• How to use the measured effective diffusion length and scanner illumination condition to demonstrate photolithography line width uniformity is introduced
  摘要介绍了如何通过测量得出的等效扩散长度和光刻机的照明条件来对任何光刻工艺的线宽均匀性进行评估。
• Due to the high costs of wafer materials and machines , it is feasible to apply rework to increase wafer yield at the photolithography stage
  摘要在晶圆制造中，由于晶圆的原料及机台成本昂贵，为了能够增加晶圆的良率，利用再加工的方式来补救不良的晶圆为可行的措施。
• Because these forms of radiation have much shorter wavelengths than the ultraviolet light currently used in photolithography , they minimize the blurring caused by diffraction
  由于这类型辐射的波长远较现在光蚀刻使用的紫外光来得短，因此可以减少因绕射而造成的模糊。
• Simulation and experiments show that for point array or hole array patterns with the same sizes maskless interference photolithography is much simple than the traditional photolithography
  模拟和实验结果表明，对点阵或孔阵图形，在同样的图形尺度下，无掩模干涉光刻比传统光刻简单得多。