monocrystalline造句

• Code for design of technological monocrystalline silicon plant
  单晶硅厂工艺设计规范
• Monocrystalline silicon polished wafers
  硅单晶抛光片
• Monocrystalline germanium slices
  锗单晶片
• Comparison of specific yield of solar cell assemblies madefrom amorphous silicon and monocrystalline silicon
  单晶硅太阳能电池组件比功率发电量比较
• The involved reason was that monocrystalline silicon had a higher smooth and uniform surface
  其原因可能是单晶硅表面原子排列非常整齐，具有高度光滑和均匀的表面条件。
• Mainly have monocrystalline and polycrystalline solar panel modules with conversion efficiency over 18 %
  单晶硅太阳能电池组件和多晶硅太阳能电池组件，转换效率高达18 % 。
• Monocrystalline cells are expensive , and this has led to the development of alternatives , which are described below
  单晶硅电池价格比较昂贵，因此也就促使其替代品的发展，如下文所述。
• An array of non - aligned monocrystalline zinc oxide nanowires zno nws is fabricated on a silicon substrate by thermal evaporation
  使用热蒸发的方法在硅基底上制备了非定向氧化锌zno单晶纳米线阵列。
• Visitors can turn the handles of a polycrystalline , a monocrystalline and an amphorous photovoltaic panel to compare their efficiencies
  参观者可转动光伏板的手柄来比较单晶硅、多晶硅和非晶硅光伏板的效能。
• Static power convertors ; rating code designation for semiconductor convertor stacks and assemblies , monocrystalline semiconductor convertor stacks and assemblies
  静态大功率整流器.第2部分:半导体整流器组和组件单
• Testing of semi - conductive inorganic materials ; determination of the surface structure of circular monocrystalline semi - conductive slices ; as - cut and lapped slices
  半导体无机材料的检验.圆形单晶体半导体薄片表面结构
• Plasma enhanced chemical vapour technique ( hf - pecvd ) on monocrystalline silicon and quartz glass substrates under the low temperature . the effects of ultrasonic pre - treating of substrates , temperature , r . f
  系统地研究了衬底的超声预处理工艺、沉积温度、射频功率以及氢气对氮化硼薄膜的生长、组成及表面形貌结构的影响。
• Modern thin - film transistors typically perform at about half the speed of monocrystalline devices , although the difference is smaller when you compare entire circuits , because components packed in three dimensions need considerably shorter wires
  现代薄膜电晶体的操作速度大约只有单晶元件的一半，然而如果拿整个电路的速度来比较，差距却没那麽大，这是因为连接三维结构中的元件所需要的导线会短很多。
• The main research findings were as follows : nickel had a higher catalysis than iron in the growth of cnts , and the thickness of catalyst affected the diameter of cnts . compared graphite and iron , when monocrystalline silicon was used as the substrate , cnts had a higher purity
  通过sem和tem分析了不同条件下产物的形貌和结构，取得以下主要结果：在两种单金属催化剂中，镍的催化活性高于铁的催化活性，催化剂薄膜的厚度决定着生长纳米碳管的直径。
• Besides , the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ) . the rheed images and intesity oscillation are collected by computer system . it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500 . atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature . the analysis were compared to simulation results . the experiment results indicated it was easy to form clusters when the rate of growth is high or
  此外,本文通过反射式高能电子衍射( rheed )监测了gasb外延薄膜的生长,利用rheed强度振荡的计算机采集系统实现了rheed图像和rheed强度振荡的实时监测。实验发现在400生长的gasb薄膜为非晶态,温度升高到500薄膜转变为单晶。利用原子力显微镜对不同生长速率和衬底温度生长的gasb薄膜的表面形貌进行观察分析,并与模拟结果进行比较。
• In this paper , molecular dynamics simulation is carried on the nanometric cutting of defect - free monocrystalline silicon . based on simulations , a reasonable explanation is given to the forming mechanism of chip and surface machined in the cutting process of monocrystalline silicon . moreover , the feasibility of brittle - ductile transition of monocrystalline silion is studied with the method of first principle stress
  对内部无缺陷的单晶硅的纳米切削过程进行了分子动力学模拟.通过模拟结果,对单晶硅纳米切削中的切屑形成过程和加工表面的形成过程做出了合理的解释.并用第一原理应力计算方法对单晶硅纳米切削过程中的脆塑转变的可行性进行了研究
• However , the refractive index will increase with the increase of the flow ratio of sifu / nhs , slightly increase with the increase of substrate temperate , and decrease with the increase of rf power . by measuring the passivation results of hydrogen plasma and sinx thin film , we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment , although it has little to do with the annealing temperature and time . the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon , but after annealing at high temperature the mobility turns down
  通过测试氢等离子体钝化和氮化硅薄膜钝化的效果，实验还发现氢等离子体处理对多晶硅材料的少子寿命提高作用比较明显，但是这种提高作用与处理温度以浙江大学硕士学位论文王晓泉2003年5月及时间的关系不大；氨化硅薄膜中的氢对单晶硅的载流子迁移率提高有一定作用，但经过高温处理后这种作用消失；氮化硅薄膜能提高单晶硅和多晶硅的少子寿命，具有表面钝化和体钝化的双重作用；氢等离子体和氮化硅薄膜都能有效地提高单晶和多晶电池的短路电流密度，进而使电池效率有不同程度（绝对转换效率0
• This lamp is the sources of energy with monocrystalline silicon solar energy cell or polycrystalline silicon solar energy cell ; the storage battery is nickel hydrogen battery or nickel cadmium battery ; that lamp holder and the lamp pole adopts casts aluminium or the stainless steel material manufacturing ; the lampcover adopts the toughened glass manufacturing , and the light source is the light source with high brightness led ' s light emitting diode ; the colour can be divided into the white and yellow , redness , orange , green and blue and seven colours become light
  该灯以单晶硅太阳能电池或多晶硅太阳能电池为能源；蓄电池为镍氢电池或镍镉电池；灯座和灯杆采用铸铝或不锈钢材料制造；灯罩采用钢化玻璃制造，光源以高亮度led发光二极管为光源；颜色可分为白色、黄色、红色、橙色、绿色、蓝色和七彩变光。
• It was first discovered that open - circuit voltage decay in multicrystalline silicon solar cells is smaller than that of in monocrystalline silicon solar cells through electron irradiation , which is explained from electron irradiation mechanism and the structure of multicrystalline silicon solar cells and also has not been reported
  通过对晶体硅太阳电池电子辐照，首次发现多晶硅太阳电池的开路电压衰减小于单晶硅太阳电池，从辐照机理和多晶硅太阳电池的结构解释了该现象。本研究未见报道。