metal-semiconductor造句

• Simulation for metal - semiconductor - metal - photodetector msm - pd circuit based - on pspice
  的肖特基势垒光电探测器的模拟
• Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact
  肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
• A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built , using steady - state continuity equations and including the effect of surface states
  通过求解一维电流连续性方程和传输方程,同时考虑表面态陷阱的作用,建立了gan基msm结构紫外探测器在稳态光照下i - v关系的解析模型。
• The photoconductive uv detectors based on zno : al thin films , having a metal - semiconductor - metal ( msm ) structure with interdigital ( idt ) configuration , were fabricated by using au as a contact metal . the characteristics of dark and photocurrent of the uv detector and the uv photoresponse of the detector were investigated
  同时, au和zno : al薄膜间已形成欧姆接触,无光照时,暗电流很小,当用= 350nm的光照射器件时,在6伏偏压时,光生电流为58 . 05 a 。
• Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work . in addition , we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic
  本文讨论了n型6h - sic欧姆接触的制备工艺及其基本电学及热学特性，并在此基础上采用金属au及ni在n型6h - sic硅面( 0001晶向)上制备了具有一定特性的肖特基势垒二极管。