bandgap造句

• the bandgap of the double heterostructure was only 0. 86μm, yet up to 1ma of photo-current was detected.
  双异质结的带隙仅为086m，迄今探测到的光电达1mA。
• The advantage of electro-absorption as a detector is that it is not necessary to fabricate a localized region of different bandgap .
  利用电吸收制作探测器的优点在于不必制备出有不同带隙的局部区域。
• A new photonic bandgap cover has been designed
  设计了一种新型的光子晶体覆层。
• Analysis of photonic bandgap microstrip structure using fdtd method
  方法分析光子带隙微带结构
• Another good review article on the wide bandgap nitrides
  另一篇不错的宽能隙氮化物系列的论文。
• The bandgap properties of one dimension heterostructure photonic crystal
  异质结构光子晶体的能带特性研究
• A pmc structure with a complete photonic bandgap has been designed
  设计出了具有完全光子禁带的pmc结构。
• Microstrip electromagnetic bandgap structure with the multiple band gaps
  具有多频带特性的微带电磁带隙结构
• Silicon bandgap temperature sensor
  硅带温度传感器
• Wide bandgap semiconductor
  宽禁带半导体
• Photonic bandgap properties of photonic crystals with a complicated periodic structure
  复周期结构光子晶体的光子能带特性研究
• Wide bandgap emitter
  宽禁带发射极
• Resonant raman scattering and photoluminescence emissions from above bandgap levels in dilute gaasn alloys
  材料的共振喇曼散射及其带边以上的光致发光光谱
• Measurement procedures for resolution and efficiency of wide - bandgap semiconductor detectors of ionizing radiation
  离子辐射的宽能带隙半导体探测器的分辨和功效的测量规程
• Modulation of photonic bandgap and localized states by dielectric constant contrast and filling factor in photonic crystals
  介电常数对比和填充率对光子晶体中光子禁带和局域态的调节
• The details of those cells are described . the actual circuit of current source , switch , bias and bandgap is presented
  给出了实际的电流源、开关、偏置、带隙基准等单元子电路的设计结果以及仿真结果。
• The linear compensation bandgap reference adopted in this thesis has limited temperature stability for ignoring the influence of vbe high order items
  仿真结果表明采用高阶补偿后,带隙基准源的温度系数由22 . 8ppm /减小为7 . 8ppm / 。
• According to the theory of the bandgap reference , a ptat current generator was designed , then the proportional voltage value to temperature could be achieved
  利用带隙基准原理设计获得与绝对温度成正比( ptat )电流,进而获得与温度成正比的电压值。
• Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar
  Algan / ganhemt的高频大功率应用在很大程度上受制于电流崩塌效应。
• Leading into the complex refractive index and making use of the characteristic matrix method , the photonic bandgap of photonic crystal with the variety of the absorb is studied
  摘要引入复折射率并利用特征矩阵法，研究了光子晶体的吸收对光子晶体能带的影响。