K ion dissolving in sbn cell and entering si substrate can make sbn cell and si cell a small twist simultaneously , which improves the matching of film and the substrate to hasten the high c - axis superior growth 轴高度择优取向的生长。由于mgo单晶与sbn晶格有着更好的匹配性，因此， mgo缓冲层的引入可以改善sbn薄膜的结晶性，获得更佳取向的sbn薄膜。
It should not be neglected that the third rank organizes the cushion level and the protection level in the tusi society , and that the substitutive social flowage bourgeoned in the fourth rank indicates the development and flux of the tusi society 其中特别值得一提的是，第三等级构成土司社会的缓冲层与保护层，第四等级萌动的替代性社会流动彰显了土司社会的发展与变迁。
Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd ) 摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/氮化矽双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。
2 、 in order to solve the phenomenon of the outdiffusion of the base dopant , two solutions are suggested : 1 ) the sige : c base can effectively solve the outdiffusion problem ; 2 ) the undoped buffer layer can constrict the outdiffusion phenomenon 2 、为了解决基区杂质外扩现象,提出了两种方案: 1 )采用掺碳的sige : c基区层,能够有效消除外扩问题; 2 )采用未掺杂的缓冲层i - sige ,能够有效抑制外扩现象。
And , the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate 而且，随着膜厚的增加，处于底层的膜层起到缓冲层的作用，逐渐改善着薄膜与衬底之间的晶格失配，从而使得sbn薄膜在( 001 )方向的优先取向性越来越好。
In this thesis , the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films , that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer , then deposited the 3c - sic films on this buffer layer 本论文采用cvd方法,并结合“两步生长工艺”进行3c - sic的异质外延生长。即:首先将si基片碳化,形成一个碳化缓冲层,然后再在此缓冲层上异质外延生长3c - sic薄膜。
In order to increase the thickness and improve the quality of sputtered films , low deposition rate and 30nm ta buffer layer on substrate have been adopted . as a result , 3 u m single films and 2 . 6 u m / 2 . 6 u m 72 . 6 u m sandwiched films have been successfully prepared 通过降低溅射速率和在基底上沉积30nm的tabuffer (缓冲层) ，解决了难以溅射生长厚膜的问题，成功制备了厚度3 m的单层膜和每层厚度2 . 6 m的三明治膜。
Zno thin film had a better crystallization with increase the substrate temperature . the buffer layer thickness effected crystalline quality and morphology of zno thin film . the results showed that the film had the best crystalline qulity and morphology when the buffer later thickness was 36nm 缓冲层的厚度对薄膜的结晶质量和表面形貌有很大的影响,研究发现,缓冲层厚度36nm时, zno薄膜有最优的取向和最平滑的表面。
It was found that the buffer layers can effectively hinder the diffusion of elements across the interface and release the thermal stress caused by thermal coefficients mismatch . the thermal stability of graded materials , therefore , has been significantly improved 这一缓冲层有效地阻碍了过渡层和半导体基体之间的元素扩散，并缓解了由于两种半导体材料之间热膨胀系数差异而产生的热应力，显著提高了叠层bi _ 2te _ 3 / fesi _ 2材料的热稳定性。
The techniques of preparing film buffer layers on si were studied . the sem , tem and xrd were adopted to study the crystal structure of films . the influences of buffer layers , substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed 进一步用扫描电镜、透射电镜和x射线衍射仪研究了薄膜组织结构和结晶情况，分析了缓冲层和衬底对ybco薄膜制备的影响、以及不同热处理条件对薄膜结晶结构及性能的影响。
