( 2 ) the ysz and sto buffer layers were prepared by sol - gel process on si substrates . the ysz and sto films could be used as the buffer layers between si substrate and ybco films ( 2 )用sol - gel法在si基板上制的钇稳定氧化锆( ysz )和钛酸锶( sto )薄膜作为si与ybco间的缓冲层是可行的。
The pl wavelength of ingaas - covered quantum dots was much longer than common quantum dots . this result hinted a way to obtain the materials with longer wavelength luminescence 加了ingaas缓冲层的循环生长量子点发光峰比不加缓冲盖层的发光峰波长要长，有助于获得长波长发光材料。
In addition , the nb ( oc2hs ) 5 - precursor sbn thin films doping the k + were crystallized with preferred c - axis orientation which is similar with the orientation of the nbcl5 - precursor sbn films Sbn薄膜表面粗糙度ra为12nm ;加了mgo缓冲层的sbn薄膜更加致密，结晶颗粒更小，表面也更平整， ra为4nm 。
Different buffers are set according to different fabrication processes . and ， by doing so , the optimized performance is obtained . in the last part of this thesis , the available samples are analyzed 本文对此作了详细深入的研究，根据不同的工艺条件设置不同的缓冲层，争取使器件的性能最优化。
By means of quantitative analysis , we accessed growth rate and film thickness of gan epilayer , and even determined in real time the thickness of buffer layer from in situ measurements of normal incidence reflectance 通过对在位监测曲线的分析，确定gan生长速率以及外延层的厚度，并利用监测曲线实时标定缓冲层的厚度。
And then the method to reduce the optics loss was discussed too in this paper . the research indicated that the crystallized phase and degree of orientation were dependent on annealing temperature 研究了各生长条件如退火温度、前驱溶液、衬底类型、缓冲层( ksbn 、 mgo )等参数对sbn薄膜性能的影响以及降低光学损耗的措施等。
This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs 该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。
Thus , the sige technology is very promising . the research in this thesis focuses on the design of sige devices . the main job includes the design of transistor structure and the optimal design of the base buffer 本论文的研究课题是sigehbt器件的设计，主要工作包括两个方面：一，晶体管的结构设计；二，基区缓冲层的设计。
In order to deal with large mismatch ( 14 . 6 % at room temperature ) between gaas and insb , a insb buffer layer was deposited firstly at low temperature 350 , followed by a insb epilayer being deposited at higher temperature 440 为了克服insb与gaas间14 . 6 %的晶格失配度,实验设计先低温生长一定厚度的insb缓冲层,随后升温生长insb外延层。
The reflection high - energy electron diffraction ( rheed ) was used to monitor the surface of insb in situ during the epitaxial growth , rheed diffraction pattern indicates volmer - weber growth at the very early stage of nucleation 低温insb缓冲层在生长初期显示明显的岛状生长,通过rheed强度振荡的观察,确定低温insb缓冲层的生长速率为0 . 26 m / h 。
