In this dissertation , high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method . in addition , zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation , simultaneously ) method and a following post - annealing process in oxygen ambient 本文介绍了采用电子束蒸发方法在si衬底表面上制备出了具有c轴择优取向的高质量氧化锌薄膜材料，另外，还采用共蒸发(通过电子束蒸发与热蒸发同时进行)及后退火的简单方法制备出包埋到介电物质mgo薄膜中的zno量子点材料。
With the development of thin film science and technology , various thin film preparation techniques developed rapidly , as a result , conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques , such as ion plating , sputtering , laser deposition , cvd , pecvd , mocvd , mbe , liquid growth , microwave and mtwecr , etc . , of which vacuum evaporation is the common technology for thin film preparation , because it has the distinct advantage of high quality of film deposition , good control - ability of deposition rate and high versatility 随着薄膜科学与技术的发展，各种薄膜制备方法得到了迅速发展，传统的所谓镀膜，已从单一的真空蒸发发展到包括蒸镀、离子镀、溅射镀膜、化学气相沉积( cvd ) 、 pecvd 、 mocvd 、分子束外延( mbe ) 、液相生长、微波法及微波电子共旋( mwecr )等在内的成膜技术。其中电子束蒸发技术是一种常用的薄膜制备技术，它具有成膜质量高，速率可控性好，通用性强等优点。
The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient , and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process . this method gives a new path to prepare mgxzn1 - xo alloy films 实验结果表明利用电子束蒸发技术制备的zno薄膜材料，在经过氧气气氛下的二次退火处理后，能够表现出较好的发光和结构特性；以mgo薄膜作为缓冲层制备出了高质量的mgzno合金薄膜材料，这为开展mgzno合金薄膜材料的研究开辟了新的途径。
Abstract : in the paper , the operation technology of electron beam evaporation plating aluminium - chromium alloy coating is studied the optimum technology is obtained by discussing the influence of votage , current on auter appearance , adhesion inner stress . the ingredients of coation and evaporation materials are analyzed , the results show that the chromium contents of coating are very different from that of evaporation materials , in the end , the corrosion - resistance of the coating consisting of different chromium contents is investigated 文摘:本文研究了电子束蒸发镀铝-铬合金涂层的制备工艺，通过讨论不同的电压、束流对膜层外观、结合力、内应力的影响，确定了合适的陈镀工艺,对涂层和膜料的成分进行了分析，表明涂层中铬含量与膜料中铬含量有较大差异,最后探讨了不同含铬量的涂层的耐蚀性。
In this dissertation , nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process 本文介绍了采用电子束蒸发方法在si补底上制备出了高纯度的金属锌膜，然后通过二次退火得到了具有六角结构的高质量氧化锌多晶薄膜材料，另外，还采用电子束蒸发mgo薄膜作为缓冲层二次退火金属锌膜的方法制备出了高质量氧化锌多晶薄膜材料和mgzno合金薄膜材料。
The relationship between the optical properties and the crystallinity was discussed . the experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of annealing in oxygen ambient , and it is feasible to fabricate zno nanoparticle embedded in mgo thin films by the co - evaporation and post - annealing method . this method gives a new path to prepare low - dimensional zno quantum dots in mgo matrices 实验结果表明利用电子束蒸发技术制备的zno薄膜材料，在经过氧气气氛下的退火处理后，能够表现出较好的发光和结构特性；用共蒸发与后退火相结合的方法能够制备出包埋在mgo介电基质中的zno量子点材料，这为开展低维半导体的研究开辟了新的途径。
