有效质量

• The binding energies of excitons are calculated with the use of variational approach , we consider the mismatch of effective masses between the well and the barrier in the process of calculation , calculate and talk about the virial theorem values in square quantum - well wires in presence of a magnetic field
  本文采用变分法，在外加磁场条件下分别计算了激子在无限深和有限深方形量子线中的基态束缚能。在计算的过程中进一步考虑了阱，垒中粒子有效质量不匹配的影响，最后我们计算并讨论了外加磁场情况下的维里定理。
• Topics covered include : crystal lattices , electronic energy band structures , phonon dispersion relatons , effective mass theorem , semiclassical equations of motion , and impurity states in semiconductors , band structure and transport properties of selected semiconductors , and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling
  被覆盖的论题包括：晶格、电子能带结构、声子色散关系、有效质量理论、半经典运动方程和半导体中的非纯态、选择性半导体的带结构和输运性质固体量子理论与准费米能级以及用于器件建模的玻尔兹曼输运理论之间的联系。
• Based on the effective mass theory and critical state model , an anisotropic theory of critical current and ac losses for single hts tape and tape stacks were established . analytical formulae were presented to calculate critical currents and ac losses with an arbitrary angle between the wide side of hts tape and the direction of ac or dc applied fields . from the anisotropic theory of ac losses of hts sample , a numerical model to calculate ac losses of hts coil was developed
  基于临界态模型与高温超导体的有效质量理论，建立了高温超导带材及并联堆叠带材的交流损耗与临界电流的各向异性理论模型；给出了高温超导带材的交流损耗及临界电流随(交、直流)背景磁场与超导带面夹角变化规律的理论公式；依据所建立的高温超导短样带材的各向异性理论公式，给出了高温超导线圈交流损耗的数值计算模型；并利用该模型，计算了高温超导双饼线圈的交流损耗；并与实验测量结果进行了比较分析。
• With the introduction of the dopants , the effective mass of carriers was changed and the seebeck coefficient was increased . at the mean time , the dopants reduced the forbidden energy gap , which changed the carrier concentration and thus increased electrical conductivity . by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb , the mechanism of transference changed abruptly at 625k
  在mg _ 2si热电材料基体中掺杂te 、 sb元素后，在结构中引入了缺陷，增大了体武汉理工大学博士学位论文系中载流子有效质量，提高了seebeck系数;降低了体系导电活化能，提高了电导率，同时也降低了热导率。
• In the effective mass approximation , using the two - dimensional equivalent potential model and a simple two - parameter wave function , we calculate variationally the ground state binding energy and correlation energy of positively and negatively charged excitons in finite deep gaas - al0 . 33ga0 . 67as quantum wells . the results show fair agreement with the previous experimental results
  在有效质量近似下，我们采用二维等效势模型，并且选取了数学形式简单、物理意义明确的两参数变分波函数，利用变分法数值计算了有限深gaas ? al _ ( 0 . 33 ) ga _ ( 0 . 67 ) as量子阱中带电激子的基态束缚能及相关能，所得结果与实验结果符合得很好。
• Firstly , we calculate variationally the binding energy and correlation energy of excitons in finite deep gaas - al0 . 33ga0 . 67as quantum wells . in the calculation , we consider the effect of effective mass and dielectric constant mismatch in the two materials . the results we obtained are basically conformed to the ones obtained from the previous theory and experiment
  首先，我们计算了有限深gaas - al _ ( 0 . 33 ) ga _ ( 0 . 67 ) as量子阱中激子的束缚能，其中考虑到了阱和垒两种材料中电子和空穴的有效质量以及介电常数的失配影响，我们计算得到的激子的束缚能及相关能与前人的理论结果和实验结果基本上相符合。
• We find that the relations between the electronic effective mass of lowest - lying conduction band and wave vector are resemble , not only for narrow - gap semiconductor zigzag tubes but also for wide - gap semiconductor zigzag tubes . the electronic effective masses at bottom of lowest - lying conduction band depend on their tube - diameters
  我们发现，无论是锯齿型窄隙半导体管还是锯齿型宽隙半导体管，同一类管的最低导带的电子有效质量随波矢变化的规律基本相同，且其导带底的电子有效质量随管径的增大而减小。
• In this paper , the wavefunction is expanded in terms of the two - dimensional harmonic oscillator eigenfunction and the mismatch of the effective mass is considered . we calculate the energy of the ground state , the energy of the first excited state and the oscillator strength of the single electron in a square quantum wire with finite barriers
  本文选取了以二维谐振子本征函数为基展开的波函数，并且考虑了有效质量的失配性，计算了有限深方形量子线中单电子的基态能，激发态能和振子强度。
• Again , the electronic effective masses at bottom of lowest - lying conduction band of narrow - gap semiconductor zigzag tubes are inversely proportional to square of their tube - diameters . as for chiral tubes , the electronic effective masses at bottom of lowest - lying conduction band contact with their tube - diameters and chiralities
  此外，锯齿型窄隙半导体管导带底的电子有效质量与其管径的平方成反比关系；对于螺旋型管，其导带底的电子有效质量不仅与管径相关，而且与螺旋度也相关联。