In the second part , the deduced self - energy in 63 theory is derived at hard thermal loop approximation . then we calculate the effective mass and damping rate , and also show that there is thermal instability above a critical temperature tc 在此基础上，出自能实部和虚部与一些介质效应的对应关系式，进而求得了粒子的有效质量和衰变率，并讨论了_ 6 ~ 3理论的热不稳定性。
In the second part , we discuss the binding energy of the impurity in finite gaas / gai . xalxas quantum wire in the first place , in which the dismatch of effective mass and dielectric constant between the well and the barrier is taken into account 在第二部分，首先讨论了有限深gaas ga _ ( 1 - x ) al _ xas量子阱线中杂质态的束缚能，其中考虑到了阱垒中电子有效质量及材料中介电常数的失配性。
In the first part , following ref [ 27 ] , the expression of the envelop function is obtained . then , considering the dismatch of effective mass between the well and the barrier , using the variational approach , we calculate the binding energy of hydrogenic impurity 在第一部分，我们按照文献[ 27 ]中的方法，得到了包络函数的表达式，并利用变分法计算了类氢杂质的束缚能，其中考虑了阱垒中电子有效质量的失配性。
We have measured the optical properties of a serial of ganas quantum well samples with the same n composition but different well width . using the calculation based on the effective mass theory , we prove that the gan00 , 5as0985 / gaas quantum well should have the type - i alignment 我们通过对一系列具有相同n的组分而不同阱宽的样品的光学特性的测试，以及用有效质量理论计算的分析，发现ganas gaas量子阱应该是第一类量子阱。
After our careful analysis , we find that there are finite part which is temperature dependent in this zero - point energy . so we have separated this part and discussed its influence to the effective nucleon mass . the result shows that this part has remarkable contribution at high temperature 但经仔细分析会发现，零点能中含有与温度相夫的有限部分，我ilte它分离出来并讨论了其xde子有效质量的影响，发现在高温下，这一零点s眶正有着显著的贡献
In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet 本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。
We discuss the qcse of the impurity in the finite square qwws considering impurity position , and raise a point of the qcse under the influence of the masses mismatch and the aspect ratio of the quantum well wires . without considersion of the mismatch of the effective masses between the well and barrier , we obtain the conclusion as follows : ( l ) the first band energy of the electron is decreased under the electric field 在前人工作的基础上，我们在有效质量近似下讨论了外加电场下有限深方形gaas ga _ ( 0 . 63 ) al _ ( 0 . 37 ) as量子阱线的杂质态和杂质的stark能移，并把我们的结果与前人的结果进行了比较。
In two - component model of hydrogen - bonded chains , the system with nonlinear and linear coupling between proton sublattice and heavy - ion sublattice is investigated . fast - mode soliton pair and slow - mode soliton pair are obtained . as for fast - mode soliton the effective mass of the kink in the proton sublattice decreases due to the nonlinear coupling and increases due to the linear coupling . for slow - mode soliton , the thing is quite opposite to that of fast - mode soliton 在氢键链二分量模型中，研究质子子晶格和重离子子晶格相互作用项中同时含有非线性耦合和线性耦合两部分的系统，得到快模孤子偶和慢模孤子偶.对于慢模孤子而言，非线性耦合降低了质子子晶格中孤子的有效质量，而线性耦合增加了质子子晶格中孤子的有效质量；对于快模孤子而言，情况正好相反
Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore , the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied 摘要利用传递矩阵方法精确计算了一维定态薛定谔方程，求解出电子穿过矩形势垒的透射系数，进一步研究了该透射系数与有效质量和矩形势垒参数的关系。
We find out the rule that the binding energies of excitons vary with the size of wires in the presence a magnetic field through the calculation . we compare the difference between our considering the mismatch of the effective masses of the wrell and barrier and our not considering the mismatch of the effective masses of the well and barrier 通过计算得出在加磁场的情况下激子的束缚能随线宽的变化坝律，同时我们发现在考虑了粒子的有效质量不匹配时激子的束缚能相对不考虑质量不匹配的情况增大。
