At . detail specification for resistance welded seal quartz crystal units for oscillator applications - dn , dz , dq and dp enclosures , 17 to 75 mhz frequency range - third overtone thickness - shear mode , at - cut , for operation over narrow temperature ranges temperature controlled - full assessment level 振荡器用冷焊密封石英晶体振子详细规范. dn d2 dq和dp外壳17至75mhz频率范围.窄温范围
In the case of a miter gate of a ship lock engineering , the results of the method of hydraulic and hydroelectric engineering specification for design of steel gate dz / t50 . / 3 - p5 ( called specification hereinafter . ) and finite element analysis are compared 以某船闸工程的人字门为例，把《水利水电工程钢闸门设计规范dl / t5013 - 95 》 (以下简称《规范》 )算法的结果与有限元算法的结果相比较。
At . detail specification for resistance welded seal quartz crystal units for oscillator applications - dn , dz , dq and dp enclosures , 50 to 125 mhz frequency range - fifth overtone thickness - shear mode , at - cut , for operation over narrow temperature ranges temperature controlled - full assessment level 振荡器用冷焊密封石英晶体振子详细规范. dn d2 dq和dp外壳50至125mhz频率范围.窄温范围
At . detail specification for resistance welded seal quartz crystal units for oscillator applications - dn , dz , dq and dp enclosures , 50 to 125 mhz frequency range - fifth overtone thickness - shear mode , at - cut , for operation over wide temperature ranges non - temperature controlled - full assessment level 振荡器用冷焊密封石英晶体振子详细规范. dn d2 dq和dp外壳17至75mhz频率范围.宽温范围
At . detail specification for resistance welded seal quartz crystal units for oscillator applications - dn , dz , dq and dp enclosures , 17 to 75 mhz frequency range - third overtone thickness - shear mode , at - cut , for operation over wide temperature ranges non - temperature controlled - full assessment level 振荡器用电阻焊密封石英晶体振子详细规范. dn d2 dq和dp外壳17至75mhz频率范围.宽温范围
At . detail specification for resistance welded seal quartz crystal units for oscillator applications - dn , dz , dq and dp enclosures , 0 . 8 to 20 mhz and 3 . 0 to 30 mhz frequency ranges - fundamental thickness - shear mode , at - cut , for operation over narrow temperature ranges temperature controlled - full assessment level 振荡器用冷焊密封石英晶体振子详细规范. dn d2 dq和dp外壳0 . 8至20mhz和3 . 0到30mhz频率范围.窄温范围
At . detail specification for resistance welded seal quartz crystal units for oscillator applications - dn , dz , dq and dp enclosures , 0 . 8 to 20 mhz and 3 . 0 to 30 mhz frequency ranges - fundamental thickness - shear mode , at - cut , for operation over wide temperature ranges non - temperature controlled - full assessment level 振荡器用冷焊密封石英晶体振子详细规范. dn d2 dq和dp外壳0 . 8至20mhz和3 . 0到30mhz频率范围.宽温范围
Based on a study of the quality problem that exists in sample analysis for 27 projects of regional geochemical survey , the author holds that the unsatisfactory analytical quality is mainly attributed to loose understanding and implementation of the quality control and quality monitoring stipulated in dz / t0167 - 95 standard 摘要通过对27个区域地球化学调查项目中出现的样品测试质量问题的研究，认为质量不高的主要原因是对dz / t0167 - 95规范中规定的有关质量管理、质量监控的错误理解和执行不严所致。
Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon . since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates , the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing . moreover , as for the technique to generate dz by rtp in lightly boron - doping samples , it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature , followed annealing and ambient of rtf as well 结果显示，对于普通轻掺硅片能形成明显的很宽的洁净区的rtp预处理工艺，应用于重掺硼样品时没有洁净区形成，所以rtp预处理获得洁净区的工艺不适用于重掺硼硅片，硼的大量掺杂对氧沉淀促进效果大于高浓度的空位对氧沉淀的洲排浙江大学硕士学位论文李春龙：直拉重掺硼硅单晶中氧沉淀的研究促进效果；大量空位的引入，有利于释放氧沉淀生长过程的内应力，适当增加重掺硼样品氧沉淀密度，减少其尺寸，并伴有层错生成。
Then , the effect of heavily doped boron on ig of czochralski silicon was also investigated . it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature , ramping annealing respectively . for conventional high - low - high three - step ig annealing , the dz becomes narrower and bmd density is higher in hb samples than that in lb samples , as a result of hb enhancing oxygen precipitation 结果显示，单步高温热处理时重掺硼样品不能形成洁净区；降温退火中，降温速度较为缓慢( 3 / min )时能生成一定量的氧沉淀，但没有洁净区形成；普通高?低?高三步热处理过程中，形成明显的洁净区，但相对轻掺样品而言，洁净区较窄，氧沉淀密度明显偏高，说明重掺硼样品吸杂能力强。
