With the rapid growth of wireless communication markets , si rfic is recognized as a fascinating candidate to meet the demands of low - cost , high integration , and mature technologies 近年来，随着特征尺寸的不断减小，深亚微米cmos工艺其mosfet的特征频率已经达到50ghz以上，使得利用cmos工艺实现ghz频段的高频模拟电路成为可能。
In this paper , the capacitance and inductor of cmos technology are briefly introduced firstly , and the noises of two - port network and cascade system are analyzed , the correlative formulas are shown at the same time 文中首先对cmos工艺中的电感电容进行了简单介绍,对二端口网络噪声和级联系统的噪声进行了分析并给出了计算公式。
The main purpose of this research is to use standard cmos process to design a high performance voltage reference , which can be adopted in a program named microsilicon capacitive accelerometer monolithic measurement circuits 采用标准cmos工艺设计出应用于“微硅电容加速度传感器单片测试电路”中的高性能电压基准源即是本文的主要研究目的。
With the development toward sub - micron and deep sub - micron technologies , cmos will take more and more important role in the field of rf ic and have extremely wide market prospects , because its low cost and easy of implementation 鉴于cmos工艺的成熟度、获得生产线支持的容易程度和价格的低廉,本次设计采用csmc0 . 6 mcmos工艺设计频率合成器。
Based on the chargable baterry ’ s charaterastic , this paper designed a new type charging control circuit with high stablility , low power consumption , high control ability , sensitivity and reliability by using cmos technology 本文基于充电电池的特性,采用cmos工艺,设计研制出一种高稳定性,低功耗,具有较高控制能力,灵敏度和可靠性的新型充电控制电路。
In this paper , a precise cmos bandgap voltage reference which uses the difference of mos source - gate voltage to perform efficient curvature compensation is described in detail , which is compatible with standard digital cmos process 论文详细描述了一个运用标准数字cmos工艺实现的、采用mos管的栅源电压差进行有效的温度曲率补偿的带隙基准电压源电路的设计。
The cmos technology is better than bipolar technology , which help the circuit get lower power , so it is adopted . the hspice is used for dac circuit simulation with tsmc 0 . 18 m bsim3 ( v3 . 1 ) cmos model 从集成度、功耗、成品率等方面考虑, cmos工艺明显优于双极型工艺,故本设计采用cmos工艺,并用tsmc0 . 18 mbsim3 ( v3 . 1 ) cmos工艺模型在hspice软件上完成电路模拟仿真。
This paper aims at investigating and realizing an asic cell of high performance instrumentation amplifier based on the standard cmos process , which is employed in the readout circuits of microsilicon sensor as a part of soc 本文的主要目的是研究并采用标准cmos工艺实现一种高性能的仪表放大器专用集成电路模块,该模块专用于电容式微硅传感器的一种soc模式读出电路中。
Recently , as great progress in semiconductor technologies , the working frequency of mosfet in cmos can be up to 50ghz . thus it is possible to realize high frequency integrated - circuits in giga - hertz band by using pure cmos process 近年来随着特征尺寸的不断减少,深亚微米cmos工艺其mosfet的特征频率已经达到50ghz以上,使得利用cmos工艺实现ghz频段的高频模拟电路成为可能。
The specifications for the transceiver rf front - end are deduced from ieee 802 . 11b standard . then , the rf front - end is implemented in cmos process under the conditions of high integrity , low power and some design margin left 根据ieee802 . 11b标准的规定，本论文推导出了对各模块的性能要求，并以提高集成度、降低功耗和保留适当的设计余量为原则，采用cmos工艺实现了各个模块。
