The simulation and test have been carried out for a metallic photonic bandgap ( mpbg ) reflector antenna , with an explicit method as well as a genetic algorithm 采用一种快速的计算方法，并结合遗传优化算法，进行了金属光子晶体( mpbg )反射面天线的模拟与实验。
To be mentioned that the bandgap reference current source is vital for the op amps to improve its performance , and it did n ' t affect the circuits " power disspation too much 还值得一提的一点是，应用cmos工艺所设计的带隙参考电流源对电路性能的提高具有重要的作用。
The possibility to combine the photonic materials with si - based micro - electronic technology motives researchers to devote to the preparation and characterization of wide bandgap ii - vi semiconductors on si substrate 为了解决这一问题，人们尝试在si衬底上进行光子材料的制备。
Digital to analog converter , analog integrated filter , bandgap reference and high drive capability operational amplifier are indispensability basic circuit of communication system 数模转换器、模拟集成滤波器、基准电压源和高驱动能力运放等电路是通信系统中不可缺少的基本电路。
When the - 3 - particle size was small , the aberration of crystal lattice appeared and the bandgap energy increased , which resulted in the blue shift of absorption in the spectrum 本研究中小的二氧化钛晶粒导致了tio _ 2的晶格畸变，进而增大了tio _ 2的禁带宽度，表现在光吸收谱的蓝移。
The material of silicon carbide ( sic ) has many good properties due to its wide bandgap . it can be applied to high - temperature , high - frequency and high - power devices 宽禁带半导体碳化硅( sic )材料由于其本身具有各种优异特性，使得在应用于高温、高频、高功率器件方面具有特殊的地位。
Periodic dielectric structure . they can create a range of forbidden frequencies called photonic bandgap . photons with energy lying in the gap cannot propagate through the medium 它是介质颗粒周期排列而成的人工材料，能够产生光子带隙，频率落在带隙内的光在晶体里沿任何方向都不能传播。
The article analyzed and compared the type , the merits and demerits of voltage reference , pointed out the advantages of bandgap reference ( bgr ) , and the improved configuration of bgr was chosen 对基准源的类型和优缺点进行了分析和比较,指出带隙基准源的优点,选取了改进型带隙基准源的结构。
We modify the defect by applications of optical tweezers technology . structural defects can dictate the properties of photonic bandgap materials , adding intentional defects within the crystal are needed 在实际的应用中，缺陷的结构决定了光子带隙材料的性质，这就需要人为的制造出具有特殊用途的缺陷。
The bandgap energy of ar gas c60 thin film is 2 . 24 ev , and the bandgap energy of n2 gas film is 2 . 09 ev . both are larger than that of vacuum c60 thin films ( 2 . 02 ev ) 用直接跃迁吸收边关系得出在氩气和氮气中制备的c60薄膜的禁带宽度分别为2 . 24ev和2 . 09ev ，均比在真空下生长的c60薄膜禁带宽度( 2 . 02ev )要大。
