C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films . low bias is helpful for the basal plane orientation , while under high bias the films shows that the c axis of bn was nearly parallel to the substrate C ）偏压或离子轰击对取向有重要影响，低偏压有利于形成基面对衬底平行的取向，而在高偏压下，薄膜表现为c轴平行衬底的取向。
By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier 实验结果表明：随着工作气压的减小，薄膜的晶粒尺寸有所减小；通过提高氢气稀释度，利用原子氢在成膜过程中起的刻蚀作用，可以稳定结晶相并去除杂相；选择适当的热丝距离能保证反应气体充分分解，又使衬底具有较高的过冷度，是形成纳米薄膜的重要条件；采用分步碳化法可以提高形核密度，有利于获得高质量的纳米- sic薄膜；衬底施加负偏压可以明显提高衬底表面的基团的活性，因负偏压产生的离子轰击还能造成高的表面缺陷密度，形成更多的形核位置。
A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film . after annealing , vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained . the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5 , so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation 利用离子束增强沉积设备，在ar ~ +离子束对v _ 2o _ 5靶溅射沉积的同时，用氩、氢混合束对沉积膜作高剂量的离子束轰击，使得被氩离子轰击后断键的氧化钒分子，再被注入氢降价，然后经适当的退火，成功地制备了热电阻温度系数高达4的vo _ 2薄膜(国外报道值为2 - 3 ) ，并研制了单元悬空结构探测器和8 1 ， 16 1线性阵列。
