It was thought that zno buffer layer eliminates the imbalance of interface charge and weaken the thermal stress , so that the dislocation between wide band - gap ii - vi materials and si substrate would be decreased 认为由于zno的存在消除了电荷不匹配以及减少热应力对在si衬底上生长宽带-族半导体材料带来的影响从而减少界面间的缺陷的产生。
As an important direct wide - band - gap ii - vi semiconductor , znse has been identified as a potential material for the fabrication of blue - green light - diodes , nonlinear optic - electronic components , infrared devices and thin film solar cells Znse作为重要的宽禁带-族半导体，在兰绿光发射器件、非线性光电器件、红外器件以及薄膜太阳能电池等方面有着广泛的应用。
Zno is a ii - vi semiconductor material with wide band - gap , which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell , uv detector , saw device , gas sensor and transparent electrodes et al for their excellent properties 氧化锌( zno )是一种具有六方纤锌矿晶体结构的宽禁带ii - vi族半导体材料,由于其优良的特性,在太阳能电池、紫外探测器、声表面波器件、气敏传感器、透明电极等方面得到了广泛的应用。
Zno is a - semiconductor material with wide band - gap , which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell , uv detector , lighting displayer , saw device , gas sensor et al for their excellent physical properties 氧化锌( zno )是一种具有六方纤锌矿晶体结构的宽禁带-族半导体材料，由于其优良的物理特性， zno薄膜在太阳能电池、紫外探测器、发光显示器件、声表面波器件、气敏传感器等方面得到了广泛的应用。
Low dimensional ii - vi semiconductor structure is one of ideal material for exciton nonlinear optical devices at room - temperature and greem - blue emission devices due to it ' s large exciton binding energy and strong room - temperature exciton effect . thus the excitonic effects in ii - vi semiconductor quantum wells and asymmetric double quantum wells have been studied deeply and widely 特别是-族半导体低维结构由于较大的激子束缚能和强的室温激子效应，使它有希望成为制备室温激子非线性器件和蓝绿光器件的理想候选材料之一，为此-族半导体量子阱和非对称双量子阱的激子效应已被很深入地研究。
Devices . if the epitaxial growth technique was used , the wide band - gap ii - vi semiconductor materials epitaxial grown on si substrates can lead to the possibility to combine the advantages of si in microelectronics with the characterization of wide band - gap ii - vi semiconductor materials in optoelectronics 如果利用外延技术，在硅衬底上外延生长直接带隙的宽带?族半导体材料，就可以把硅在微电子集成技术中的优势与宽带?族材料在光电特性方面的优势结合起来，使器件兼有高性能和低成本的优点。
Wide band - gap ii - vi materials , such as znse , znte and their alloys attract much attention due to their potential applications in light - emitting devices ( leds ) , laser diodes ( lds ) , optical bistable and optical nonlinear devices operqtynw in blue - green spectrum range for the fact that they exhibit large band gap and high exciton binding energy 宽带-族半导体材料，尤其是znse和znte及其合金具有宽带隙、直接带跃迁、激子束缚能大等优点而作为蓝和蓝绿发光、激光以及在该波段响应的光学双稳和光学非线性的重要候选材料。
