In this paper , the flow pattern defects ( fpds ) were revealed by secco etchant and their shape , distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ) . the relationship between etching time and the tip structure of fpds was also discussed . furthermore , by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar , the annihilation mechanism of fpds was discussed in this paper 本文将cz硅单晶片在secco腐蚀液中择优腐蚀后，用光学显微镜和原子力显微镜对流动图形缺陷( flowpatterndefects , fpds )在硅片中的形态、分布及其端部的微观结构进行了仔细地观察和研究，并讨论了腐蚀时间对fpds缺陷端部结构的影响；本文还通过研究ar气氛下快速退火( rapidthermalannealing , rta )对fpds缺陷密度的影响，初步探讨了fpds的消除机理。
The accuracy of the image analysis will not be affected under the lower resolution in our analysis work , and the segmentation result in the coarse resolution will be used as an initiation of the analysis in the fine one , which will satisfy the accuracy requirement of the fast annealing algorithms 在多分辨率运动图像分析过程中，分辨率的降低不但不会影响分析结果的精确性，而且还可以将小尺度上的分析结果作为初始值，应用到大尺度图像中去。这一点正好满足了快速退火方法中所要求的精良准确的初始分割的要求。
In this paper , we used different doping means to prepare the mn - doped gaas material . firstly , we incorporated mn of different dose into gaas by ion implantation , including the couple - ion implantation with mn + and c , then performed rapid thermal annealing in different temperature . furthermore , we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion 本论文利用不同掺杂方法进行了掺mngaas这种dms材料样品的制备，首先利用离子注入法对砷化镓( gaas )材料进行不同剂量的锰( mn ~ + )离子注入，其中包括加碳( c )的双离子注入，然后在不同温度下进行快速退火处理；此外还利用扩散法对gaas晶片进行不同mn扩散源(纯mn 、及mnas )的掺杂。
