电子施主的英文

• electron donor

• "电子"英文翻译    electron
• "施主"英文翻译    alms giver; benefactor donor ...
• "离子施主" 英文翻译 :    ionized donor; ionizeddonor
• "电子施周昼合物" 英文翻译 :    electron donor acceptor complex
• "施主" 英文翻译 :    1.(施舍财物的人) alms giver; benefactor2.[物理学] donor; donor impurity; [电子学] electron donor
• "反施主" 英文翻译 :    transdonor
• "女施主" 英文翻译 :    benefactress; benefactrix
• "浅施主" 英文翻译 :    shallow donor
• "深施主" 英文翻译 :    deedonor
• "导演的妻子施南生" 英文翻译 :    nansun shi
• "被占施主" 英文翻译 :    occupied donor
• "补偿施主" 英文翻译 :    compensating donor
• "慈善家，施主。" 英文翻译 :    almsgiver
• "电离施主" 英文翻译 :    ionized donor
• "旧热施主" 英文翻译 :    old thermal donor
• "离子化施主" 英文翻译 :    inoized donor
• "浅施主能态" 英文翻译 :    shallow donor state
• "氢施主型" 英文翻译 :    hydrogen donor type
• "设施主体" 英文翻译 :    facilitation agent
• "深施主能级" 英文翻译 :    deedonor level
• "施主掺杂" 英文翻译 :    donor doping
• "施主电荷" 英文翻译 :    donor charge
• "施主分子" 英文翻译 :    donor molecule
• "施主给予体" 英文翻译 :    donor
• "施主耗竭" 英文翻译 :    donor depletion

• Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
  基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大