栅漏的英文

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"栅漏"怎么读用"栅漏"造句

英文翻译手机版

[电学] grid leak; gate drain
◇栅漏电流 gate leak current; gate leakage current

"栅"英文翻译 railings; paling; palisade; ...
"漏"英文翻译 leak; drip
"【电学】栅漏。" 英文翻译 : grid leak
"栅漏阻" 英文翻译 : grid leak
"可变栅漏" 英文翻译 : variable grid leak
"栅漏电流" 英文翻译 : gate leak current
"栅漏电容器" 英文翻译 : grid leak condenser; grid lerk conde er; grid lerk condenser; grid-leak capacitor
"栅漏电阻" 英文翻译 : grid leak resistor; grid-leak resistance
"栅漏调制" 英文翻译 : grid leak modulation
"栅漏检波器" 英文翻译 : grid leak detector; grid-leak detector; leaky grid detector
"栅漏偏压" 英文翻译 : grid leak bias; grid-leak bias
"栅漏整流" 英文翻译 : grid-leak rectification
"栅漏偏压分离" 英文翻译 : grid-leak bias separation
"栅漏电容检波器" 英文翻译 : grid leak capacitor detector
"栅流限制" 英文翻译 : grid current limiting
"栅流陷落式振荡器" 英文翻译 : dipmeter; grid-dip meter
"栅流陷落式测振器" 英文翻译 : grid-dimeter
"栅流陷落式波长计" 英文翻译 : grid-dip wavemeter
"栅流下降式测试振荡器" 英文翻译 : grid-dip meter

例句与用法

Common - gate drain source connection
共栅漏源连接
Under pulse condition , charging and discharging of surface states between gate and drain induce gan hemt current collapse
脉冲条件下, ganhemt电流崩塌效应主要由栅漏之间表面态充放电引起。
The main work of this thesis analyzes the organic static induction transistor ' s operational mechanism , and researchs the change of gate length , change of gate - drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor
本论文的主要工作是解析有机静电感应三极管的工作机理，并研究了栅极长度变化、栅漏极间距变化和导电沟道的宽度变化对有机静电感应三极管工作特性的影响。
It is believed that p - si tft will be the main type in the future panel display . among the process of manufacture p - si tft , the source and drain will have the superposition with grid for the reason of machine ’ s alignment error . the superposition will bring superposition capacitance and it will badly cut down the electric performance
在制备多晶硅tft时,由于机器的套准误差会在栅极与源、漏极之间产生重叠部分,这样就造成了栅源、栅漏之间的交叠电容,交叠电容的存在严重影响了多晶硅tft的性能,而利用自对准工艺制备的多晶硅tft则避免了交叠电容的产生。
In this paper , the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation . the measure which can improve the stability of sulfur passivation is proposed
本论文通过对gaasmesfet击穿机理和硫钝化机理的研究，用负电荷表面态理论，解释了gaasmesfet动态击穿特性及硫钝化后栅漏击穿电压增大、源漏饱和电流减小的机理，提出了改善硫钝化稳定性的措施。