Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688 电子元器件详细规范. 3da2688型硅npn高频放大管壳额定的双极型晶体管
Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient rated thyristors 电子元器件质量评定协调体系规范.空白详细规范.环境额定的半导体闸流管
Blank detail specification for rectifier diodes including avalanche rectifier diodes , ambient and case - rated , for currents greater than 100a 大于100a ，环境和管壳额定的整流二极管包括雪崩整流二极管空白详细规范
Semiconductor devices - discrete devices - blank detail specification for bidirectional triode thyristors triacs , ambient and case - rated , for currents greater than 100a 半导体器件分立器件电流大于100a环境和管壳额定的双向三极晶闸管空白详细规范
Undershoot undershoot refers to the amount by which voltage or frequency drops below the nominal value as the voltage regulator or governor responds to changes in load 下超调下超调指电压调整器或控制器在应对负荷变化时，电压或频率低于额定的量。
Semiconductor devices discrete devices part 6 : thyristors section two - blank detail specification for bidirectional triode thyristors triacs , ambient or case - rated , up to 100a 半导体器件分立器件第6部分:闸流晶体管第二篇100a以下环境或管壳额定的双向三极闸流晶体管空白详细规范
7 after the power steady , according to rated load condition , meeting to each area of display equably for led display to provide with electric power supply on the safe side 7供电电源经稳压后，按额定的负载情况，均匀地分接到显示屏的各个区域，为led显示屏提供安全可靠的电力供应。
Semiconductor devices - discrete devices . part 7 : bipolar transistors . section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification 半导体器件分立器件第7部分:双极型晶体管第一篇高低频放大环境额定的双极型晶体管空白详细规范
Semiconductor devices - discrete devices - part 6 : thyristors - section three - blank detail specification for reverse blocking triode thyristors , ambient and case - rated , for currents greater than 100a 半导体器件分立器件第6部分：晶闸管第三篇电流大于100a环境和管壳额定的反向阻断三极晶闸管空白详细规范
