As the silicon - based technology has developed to its limit , it is urgent to search for a procedure that can maintain the development of nowadays technology . sige material can be a candidate 由于si材料受迁移率低、禁带宽度固定等性质的限制, sige材料在微电子领域中受到越来越多的关注。
Using a strained si layer as a channel in cmosfet may increase the mobility of carriers and thus enhance the device ’ s performance considerably such as transconductance and cutoff frequency 在sige虚拟衬底上生长应变si层做器件沟道,将大大增加载流子的迁移率,从而提高器件的跨导和其他性能。
There were some degration in the purified protein , but gst - ap - 2 a still had the dna binding activity in the gel shift assay . the gst - testin and gst - antn1 were used for immunolize rabbits 虽然所提取的融合蛋白gst - ap - 2出现较多降解，但是电泳迁移率变动分析显示其仍然具有良好的dna结合活性。
So , in order to improve the roi of training , it is a realistic and urgent issue to study how to improve the training transfer and what factor effects training transfer in hotels 因此，对饭店培训迁移这一培训关键环节进行研究、探讨，提高饭店的培训迁移率便成为一个非常具有现实意义的紧迫课题。
It was found that , the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor , both the charge density and the resistivity increase with x value , while the carrier mobility decreases with x 晶体的电学性能，发现生长态的mncd晶体均为p型半导体。随着组分x值的增大，载流于的浓度np减小，迁移率p 。
Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model 基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。
A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically 在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。
The experiments show : growth temperature is one of the key growth parameter by which the surface morphology , alloy composition , crystalline quality , mobility and carrier concentration are influenced 实验表明：生长温度是一个重要的生长参数，它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。
The result of the cluster analysis of the karyotype resemblance - near coefficient and that of the cluster analysis by means of the relative mobility ( rm ) is roughly same with that of the morphology classification 同工酶资料和形态学资料基本一致。核型似近系数和est同工酶酶带迁移率( rm )的聚类结果与形态分类结果基本一致。
This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs 该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。
