In this thesis , the rtcvd equipment that suitable for the growth of sic thin film was studied , and the sic thin film growth process was primarily explored 本文主要探索适用于碳化硅薄膜生长的rtcvd装置，并对生长工艺进行了初步探索。主要工作包括： 1
By controlling the parameters of deposition , fabricated films are single phase and grown well on two kinds of substrates with different lattice constants 继而论及薄膜生长方式，具有不同失配度的衬底对薄膜产生的不同应力类型，光刻和镀电极的简略步骤。
By using theoretical calculation and rheed monitoring , the strain behavior in heteroepitaxy of ferroelectric oxides thin films was designed and controlled experimentally 通过理论预测和rheed的检测,控制氧化物薄膜生长,特别是控制铁电氧化物薄膜生长中的应变行为。
So the growth technology of lsco thin films on different substrates has been studied . the round plate lsco ceramic targets were prepared with traditional sintering technology 就此开展的lsco薄膜生长工艺研究取得了以下结果: 1 .研究了lsco粉末的溶胶凝胶自燃烧工艺,并制备了lsco靶材。
The effect of many factors on the growth of thin films is especially analyzed and generalized , such as surface topography , structure defect of substrate , deposition temperature , and so on 特别对基底的表面形貌、结构缺陷、沉积温度等因素对薄膜生长影响的蒙特卡罗方法模拟的研究进展进行了分析和归纳。
Its growth kinetic is studied through root mean squre roughness ( rms ) changing with time by afm . the growth can be divided into three sections : island growth , diffusion growth and second island growth 根据表面粗糙度( rms )随时间变化,把薄膜生长分为岛状生长、扩散生长和二次岛状生长三个阶段。
It presented the deposition process of cds thin films by chemical bath deposition ( cbd ) and treatment after prepared . the initial growth rates dependence on experimental conditions were investigated 还介绍了cbd ( chemicalbathdeposition )法制备cds薄膜的方法、后期处理以及沉积条件与cds薄膜生长的关系。
In addition , the growth temperature of films in high substrate temperature process is more similar to that of the single crystal growth in which the hexagonal system shows the sheet growth habit 高温下的薄膜生长更接近于单晶的生长条件，六角晶系晶体的结晶习性是片状生长，表现为片状的单晶，这种习性受晶体自身结构特性的限制。
Energies , incident angles and positions are the fundamental dynamic coefficients of atoms reaching the substrate to form the film and will greatly influence the forming process of the film and consequently the characteristics of the resulting film 在射频磁控溅射中，成膜粒子到达靶面时的能量、入射角度、位置分布对下一步薄膜生长的过程及薄膜性质有着重要的影响，它决定了成膜粒子在衬底上的运动。
The structurally perfect and high - quality ba0 . 5sr0 . 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0 . 1sr0 . 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates 详尽地分析这些薄膜的衍射图样可知，薄膜都是以外延特性生长的而且晶体质量良好，但薄膜生长模式及表面平整度受沉积条件影响较大。
