The optical characteristic and photoelectricity response of zno have been studied in this thesis . in addition , zno - based schottky diodes and zno - based thin - film transistors were fabricated 本文主要研究了zno薄膜的生长及其光学性质和光电响应;制作了肖特基二极管和薄膜晶体管。
The display principle of thin film transistor liquid crystal display module ( tft - lcd module ) and its testing technology are discussed in this thesis 论文分析了薄膜晶体管液晶显示( tft - lcd )模块的显示原理及其测试技术,以液晶显示器件驱动原理为基础,利用arm芯片构建了tft - lcd模块测试系统。
In order to drive the lcd with high resolution and improve the displaying quality , people designed a tft ( thin - film transistor ) on every pixel of lcd to control display pixels independently 而在高分辨率的液晶显示器中,为了提高显示画面的质量。人们在每个显示像素上设计了一个非线性的有源薄膜晶体管( tft thinfilmtransistor )来对每一个液晶像素进行独立驱动。
Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress 本文主要研究了典型尺寸的n型金属诱导横向结晶多晶硅薄膜晶体管在两种常见的直流应力偏置下的退化现象:热载流子退化和自加热退化。
Defect generation distribution along the channel appears to be different in two cases . several common degradation phenomena were also summarized from some recent typical research work on the reliability of low - temperature processed poly - silicon thin film transistors 文章还结合近几年国际上对于低温多晶硅薄膜晶体管器件可靠性开展的一些有代表性的研究工作,对一些常见的退化现象进行了综述和比较。
Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays , as it is most feasible approach to high resolution , high integration and low power consumption as a result of its high aperture ration . there are less number interface of the crystal grain , lower metal impurity and higher mobility in the electric current director , the milc p - si tft has been the research focus in the fields of amlcd , projection display , oled etc . there are vast dangling bonds and bug 多晶硅薄膜晶体管( p - sitft )液晶显示器可以实现高分辨率、高集成度、同时有效降低显示器的功耗,因而成为目前平板显示领域主要研究方向;而以横向晶化多晶硅为有源层的tft由于在导电方向有更少的晶界、更低的金属杂质污染、更高的载流子迁移率而成为目前有源矩阵液晶显示领域、投影显示、 oled显示等领域研究的热点。
Hydrogenated amorphous silicon ( a - si : h ) by virtue of its superior properties is increasingly playing an important role in the high - technology field , such as film solar cells , film transistor and flat display . however , low deposition rate of a - si : h seriously restricts its further industrializations 氢化非晶硅薄膜( a - si ： h )以其优越的特性在薄膜太阳能电池、薄膜晶体管和大面积平面显示等技术领域起着日益重要的作用，但过低的沉积速率严重限制了它的进一步产业化。
The effect of a few important geometrical and physical parameters which include the length of the active region , the thickness of the active region , bulk traps , interface traps , on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici 摘要利用高级二维器件模拟程序medici分析了多晶矽薄膜晶体管有源区的长度、体内陷阱、界面陷阱、栅氧化层厚度等几何参数及物理参数，并研究了这些参数对薄膜晶体管特性的影响。
