When films were fabricated with bias voltage , the original resistances value of the films could be lower . in order to enhance gmr effect , to reduce the original resistance of the film is significant 在薄膜制备的过程中加偏压可以有效的降低沉积薄膜的原始电阻值,薄膜原始电阻值的降低对于提高巨磁阻值是非常有益的。
( 2 ) the morphology and electrical properties of meh - ppv films were studied by atomic force microscopy , x - ray photoelectron spectroscopy . it is found that technics of fabrication affect the devices ’ performance ( 2 )利用原子力显微镜、紫外分光光度计对meh - ppv薄膜表面性能以及电性能进行了研究,讨论了薄膜制备工艺对器件性能的影响。
The synthesis , gas - sensing properties and the influence of doping on la _ 2nio _ 4 thin film with nanocrystalline structure have been researched systematically . first , a newly prepare method for thin film - inorganic complex sol - gel process has been studied 首先，以la _ 2nio _ 4薄膜为研究对象对新型的薄膜制备方法?以无机盐为原料的络合物溶胶-凝胶法（ icsg ）进行了深入研究。
In order to optimize parameters of sputter - depositeing used to manufacture silicon - based tm films in the next step , the dissertation analyses and explains the difference between the two surfaces of sputtered tini film from sputtering factors 为优化溅射工艺参数以用于后续的硅基tini薄膜制备，本文从工艺因素入手，对玻璃基溅射薄膜两个表面的质量差异进行了分析，并给出合理解释。
Mbe and mocvd mothods have been used successfully to produce znse film . however , because of the high expense , mbe and mocvd are difficult to popularize . in this thesis , we try to find some inexpensive method to produce the znse film 使用mbe和mocvd方法制备znse薄膜的工艺已经比较成熟，但由于这两种方法需要昂贵的设备和很高的运行成本，所以不利于znse薄膜制备技术的推广和发展。
With the furthermore development of ultra thin film technology , soft x - ray multilayer mirrors was applied in many fields , such as astronomy , microscope technology , euv lithogrphy , x - ray laser , icf diagnosis and so on 随着软x射线超薄膜制备技术的不断发展，软x射线多层膜反射镜已在多个领域中投入研究与应用，如天文学、生物医学显微镜、极紫外投影光刻技术、 x射线激光、高温等离子体诊断等等。
The heat - treatment temperature , the doping concentration of ag ( ag / si ) and drawing speed of the substrates can regulate the size , amount and distribution of silver nanaparticles in the matrix , and then influence the optical absorption of the samples 结果表明，复合膜的处理温度、银的掺杂浓度和薄膜制备时的提拉速度都可使样品的银粒子的大小、数量和分布产生变化，从而影响样品的光吸收性能。
Much work has been done to prepare silicon nitride by all kinds of cvd ( chemical vapor deposition ) . however , the electrical structure and optical properties of si3n4 have not been investigated in detail by the first principles theory 人们对氮化硅研究做了大量的工作,但主要集中在用各种化学气相沉积的薄膜制备上,而且很多工作在实验上目前还难以实现,只能借助计算机用第一性原理方法进行计算和模拟。
During the course of film fabrication , we find that sputtering power and annealing temperature are the most important factors that influence the structure and quality of fe _ 3o _ 4 film . researching them , the optimum condition of fabricating pure fe _ 3o _ 4 is founded 薄膜制备的实验中发现溅射功率、退火温度是影响fe _ 3o _ 4结构及属性的重要因素,通过对这两个因素的研究,发现了制备单相成分的fe _ 3o _ 4薄膜的最优条件。
When the two layers of sio2 with different refractive index are finished , the designed mask pattern is printed on the film by photolithography . after that , icp is performed for dry etching , then , the waveguide structures are obtained . at present , the rudimental graph of edg has been obtained 两层不同折射率的sio _ 2薄膜制备好之后，经过光刻、等离子体刻蚀( icp )的工艺步骤之后，形成了波导结构，初步制作出了器件的图形。
