Due to great advantage of the excimer laser in photoelectron material , photoelectron technology research , so in this thesis , a xecl excimer laser is designed in order to solve some problem in semiconductor film , cmr film , quartz film and other kind of film application , optical etching field , interaction between laser and material , material plasma study . the parameters of the excimer laser is e also measured and analyzed 因此本文以气相沉积、外延生长、巨磁薄膜、金刚石及其它薄膜制备及后续的光刻，激光与物质的相互作用，等离子体研究为目的，研制获得了激光脉宽18ns ，单脉冲能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重复频率5hz的xecl准分子激光器。
For the ld pumped self - q - switched laser , the peak power , pulse energy , pulse width and energy extraction efficiency , which have been influenced by the loss in the cavity , cavity length and the threshold absorption coefficiency of the absorber , have been calculated . then we know how to choose the parameters of the self - q - switched laser for design 根据自调q二极管泵浦固体激光器的特点，计算了腔内损耗、腔长和饱和吸收体的初始吸收系数对于峰值功率、单脉冲能量、脉冲宽度和能量利用率的影响，并由此提出了设计自调q激光器中的参数选择规律。
For the needs of researching a useful dial system , in this thesis , we studied a vast chinese and english literature and discussed the principle of dial system in detail . we analyzed the factor of influencing the accuracy and sensitivity of measurements , in special , discussed the influence of atmospheric turbulence and laser speckle 为研制出有实用价值的dial系统，本文在参考大量国内外文献的基础上，对系统原理以及影响系统测量精度和灵敏度的各种因素进行了详细讨论，并且着重分析了大气湍流和目标斑纹这两个最重要因素对高脉冲能量的co2dial系统测量灵敏度的影响。
The relationships between the laser performance index , such as laser power densities , pulse energy and energy densities , and the diameter of holes have been set up , and a experience formula between the energy density and the diameter of holes has been established by the regression method , based on the experiment results 在此基础上，本文对微喷带激光打孔机的性能进行了试验研究，得到了激光功率密度、激光脉冲能量和激光能量密度对打孔孔径的影响关系。通过数据回归的方法，建立了激光能量密度与孔径之间的半经验公式。
Some researches about frequency doubling are made , and two methods to improve intensity of second frequency generation are given . we realized q - switched 532 nm laser , by using nd : gdvo4 as laser crystal , using cr4 + : yag as saturable absorber , using ktp as intra - cavity frequency doubling crystal . average power of 109mw , repetition of 40khz , pulse width of 30ns , pulse energy of 2 . 6uj , peak power of 91w are obtained 4 .对倍频理论进行研究和分析:讨论两种提高二次谐波功率密度的方一法;实验匕在国内首次实现ld端面泵浦nd : gdvo4 / ktp ，用cr4 + : yag作为可饱和吸收片的绿光激光器，腔内倍频得到了平均功率为109mw 、重复频率为40khz 、脉宽为3ons 、单脉冲能量为2 . 6闪、峰值功率为glw的调q绿光输出。
The results showed that the survival rate ( damage radius ) decreased ( increased ) with the increase ( decrease ) of pulse energy or pulse rate immediately after 532nm or 1064 nm laser irradiation , and the survival rate ( damage radius ) immediately after 532nm laser irradiation was slightly larger ( smaller ) than the one immediately after 1064 nm laser irradiation at the same pulse energy and pulse rate 实验结果表明，无论是1064nm照射还是532nm照射，即时存活率都随着脉冲能量的增加或者脉冲频率的升高而降低；损伤半径随着脉冲能量的增加或者脉冲频率的升高而增大。而在相同参数的条件下， 1064nm照射组的即时存活率比532nm照射组的小；前者的损伤半径比后者的较大。
