Meanwhile , the er 4f spectrum measured upon annealing exhibits well - resolved fine structure , implying that only mono - species of er silicide may exist on the surface 同时观察到了清晰的铒4f价带谱，这暗示着只有一种铒硅化物在表面形成。
Our company is a joint - stock company operated under the modern corporation system . we have a production line of organic chloride , silicide , nitride compounds and etc 本公司是一家集医药中间体研发、生产、销售为一体的、按现代企业制度运作的股份企业。目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
The heat - reaction characteristics of ni / si and tin / ni / si structure and the regularity for forming the nisi film have been studied deeply and formed the excellent ni - salicide shallow junction diode 文中对ni si和tin ni si的热反应特性以及nisi薄膜的形成规律进行了详细的研究。制备了优质的ni硅化物浅结二极管。
Auger e1ectron spectroscopic measurements indicate that the intermixing between the deposited er and the substrate si atoms ieads to the formation of ersi , with the outermost surface terminated by si atoms Auger电子能谱（ aes ）测量结果表明，由于互扩散机制的作用，退火中反应形成的饵硅化物的最外层原子是硅原子。
Though some properties of anode materials such as nitrides , silicides , oxides and alloys are better than that of carbon materials , they are still unsatisfactory from the viewpoint of application 氮化物、硅化物、氧化物和合金等负极材料虽然在某些性能方面强于碳材料，但是从实用的角度而言，还存在着一些不如意的地方。
On the other hand , ultra thin er silicide films are formed on si ( 00l ) substrate by room temperature deposition of 3 to 20 ml er atoms followed with the subsequeni in situ annealing 对铒硅化物超薄层表面结构的进一步研究是在上述工作的基础上展开的。室温下在硅（ 001 ）表面淀积了3至20单层的饵原于，并加以退火处理。
2 . from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented . the following results can be extracted 2铒硅( 001 )界面、表面及铒硅化物最初形成过程研究首先利用同步辐射光电子能谱方法研究了室温下铒在硅( 001 )表面的淀积和退火过程。
By carefully checking the leed pattern , it is found that the " ( 2x2 ) " pattem is actually a combination of the c ( 2 x 2 ) reconstruction from the ersi , island surfaces and the ( 2x l ) reconstruction from the bare si substrae 对（ x2 ）再构的低能电子衍射的仔细研究表明，实验中观察到的px2 ）再构实际上是来自于饵硅化物的叶x2 ）再构与来自硅表面的cxi八门2 ）再构的迭加产物。
In this paper , ni - salicide process has been investigated intensively for the application to deep sub - micron coms devices . with the size of devices scaling , ni - salicide is more suitable for cmos devices than ti - salicide or co - salicide by improving salicide process 随着器件尺寸的进一步缩减，与传统的ti 、 co自对准硅化物相比， ni自对准硅化物更能适用于cmos器件对硅化物的要求。
Annealing of the er - covered si ( 00l ) surfaces to 600 oc results in the emergence of a new component with a 1 . 2 ev energy shift towards lower binding energy in the si 2p core level spectrum , which is indicative of the presence of some sort of er silicides 同时，当覆盖了铒的样品被退火至600 ，在硅2p3 / 2芯能级峰的低结合能端约1 2ev处出现了一个新的峰，并被确认为来自于铒硅化物。
