砷化

• Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide
  半绝缘砷化镓剩余杂质浓度微区试验方法
• Numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet
  高功率电磁脉冲对砷化镓金属半导体场效应管的影响
• Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
  砷化镓外延层载流子浓度电容-电压测量方法
• Semiconductor discrete device . detail specification for type cso467 gaas microwave fet
  半导体分立器件. cso467型砷化镓微波场效应晶体管详细规范
• Semiconductor discrete devices . detail specification for type cs0464 gaas microwave fet
  半导体分立器件. cs0464型砷化镓微波场效应晶体管详细规范
• Many sulphides , selenides , and telluides have the nickel arsenide , nias , type of structure
  许多硫化物、硒化物和碲化物具有砷化? nias型的结构。
• Many sulphides , selenides , and tellurides have the nickel arsenide ' s nias type of structure
  许多硫化物，硒化物和碲化物具有砷化镍nias型的结构。
• Semiconductor discrete device . detail specification for gaas varactor diodes for 2ec600 series
  半导体分立器件. 2ec600系列砷化镓变容二极管详细规范
• Workplace air - determination of arsine - silver diethyl dithiocarbamate spectrophotometric method
  车间空气中砷化氢的二乙氨基二硫代甲酸银分光光度测定方法
• Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction
  砷化镓抛光片亚损伤层的x射线双晶衍射试验方法