In this paper , firstly , the effect of heavy boron - doping on oxygen precipitation was investigated . after annealed at different conditions , it is found that oxygen precipitation is enhanced by heavily boron doping , especially at high temperature 本文研究了直拉重掺硼单晶硅的氧沉淀行为，着重研究了直拉重掺硼硅单晶中的氧沉淀的热处理、内吸杂、 rtp处理等性能。
Especially fatigued because of the wandering propensity which had seized him in the morning , he now half dragged his wet feet , shuffling the soles upon the sidewalk . an old , thin coat was turned up about his red ears - his cracked derby hat was pulled down until it turned them outward 一件单薄的旧上衣直拉到他冻得发红的耳朵边，破烂的圆顶礼帽拉得低低的，把耳朵都给压翻了过来。
Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100 . in nitrogen atmosphere , more defects were induced in fast neutron irradiated czsi than in argon atmosphere 不同气氛下快中子辐照直拉硅中缺陷形成的差异很大， 1100的高温退火中，与氩气氛相比，氮气氛退火样品中出现了更多缺陷。
Moreover , concentrations of interstitial oxygen in samples changed after fast neutron irradiation . the interstitial oxygen concentration of the samples decreased with increasing of irradiation dosage . this result can be explained in terms of higher generation rates of ( v - o ) complex 另外，快中子辐照对于直拉硅的间隙氧含量有很大影响，间隙氧含量随着辐照剂量的增加而减少，这主要归于样品中产生了大量的( v - o )复合体。
In this paper , the author demonstrated the basic principle , development history and characters of high - press liquid - enveloped czochralski method ( leg ) , and its application in producing the gap semi - conductors , at the same time of introducing the general situation of them 本文论述了高压液封直拉法的基本原理、发展历史、特点，该法在半导体材料行业的应用及应用中的影响因素，化合物半导体材料磷化镓的概况、高压液封直拉法在制备该材料时的应用。
Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon . since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates , the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing . moreover , as for the technique to generate dz by rtp in lightly boron - doping samples , it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature , followed annealing and ambient of rtf as well 结果显示，对于普通轻掺硅片能形成明显的很宽的洁净区的rtp预处理工艺，应用于重掺硼样品时没有洁净区形成，所以rtp预处理获得洁净区的工艺不适用于重掺硼硅片，硼的大量掺杂对氧沉淀促进效果大于高浓度的空位对氧沉淀的洲排浙江大学硕士学位论文李春龙：直拉重掺硼硅单晶中氧沉淀的研究促进效果；大量空位的引入，有利于释放氧沉淀生长过程的内应力，适当增加重掺硼样品氧沉淀密度，减少其尺寸，并伴有层错生成。
Thus it is very important to investigate the behavior of oxygen and oxygen precipitation in heavily boron - doping czochralski silicon ( czsi ) . however , there are few papers about it , especially the effect of rtp . in this research , oxygen precipitation in heavily boron - doping czsi in different conditions have been systematically investigated 但是，相对于研究得较为深入的普通轻掺直拉硅中氧沉淀而言，国际上对直拉重掺硼硅单晶中氧沉淀的研究非常少，尤其是rtp处理过程中重掺硼硅单晶中氧沉淀的行为，目前还没有相关报道。
The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing , at reasonable cost , large diameter semi - insulating gaas has a use in the production of gaas integrated circuits , and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal 目前，液封直拉技术生长gaas单晶获得了广泛关注，因为它能够以合理的成本生产大直径的半绝缘单晶。半绝缘材料是生产集成电路等微电子器件的良好材料，而这种应用就要求整个晶片具有很高的均匀性。
Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic 以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管( mesfet )器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si - gaas ( lecsi - gaas )衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。
In czochralski silicon crystals ( czsi ) through fast neutron irradiation , formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ) , positron annihilation technology ( pat ) and scanning electron microscope ( sem ) . the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron , positron annihilation average lifetime of samples increased with increasing of irradiation dosage . positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n . cm - 2 tended to constant 本文对直拉硅样品进行了不同剂量的快中子辐照，在硅中引入大量的亚稳态缺陷，研究这些亚稳态缺陷的形成，并在较宽的温度范围内对辐照样品进行了退火处理，研究退火后亚稳态缺陷的转化及同硅中氧的相互作用，应用傅立叶变换红外光谱技术( ftir ) 、正电子湮没技术( pat )和扫描电镜( sem )进行了测试。
