The classification and characterization of the laser crystals were introduced in the thesis , and the research and development of the yvo4 crystal were systematically reviewed . the detailed experimental project was carried out to probe the reason of the absorption peak in the 1552nm of yvo4 crystal . the raw materials of yvo4 were synthesized through several different procedures 本文简要的介绍了激光晶体的分类及其性能，对钒酸钇晶体的现状和发展进行了总结，并针对本课题的目的设计了详尽的实验方案以探究部分钒酸钇晶体在1552nm处存在吸收峰的原因。
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After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide 其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。
