The development of filters , resonators and other telecommunication technology required better dielectric materials . the dielectric materials , used as the resonate body , should be high in dielectric constant , low in dielectric loss and a near zero temperature coefficient of dielectric constant in high frequency band , also could be sintered in a relative low temperature so as to reduce production cost , and what ’ s more , the miniaturization and reliability of materials are also the main aspects in the research work of high frequency band dielectric materials 随着滤波器、谐振器等器件以及通信技术的发展,人们对电介质材料的要求越来越高,要求作为介质谐振腔的电介质材料在高频段下具有高介电常数,低介电损耗,接近于零的介电常数温度系数,还要求高频电介质材料能够在较低的烧结温度下烧成,以降低实际生产的成本,此外,材料的小型化,高可靠性也是高技术高频介质材料的重要研究方向。
With the increase of dwelling time or si / c / n content , the " " and tg ? of mas - si / c / n composites are increased . the dielectric constant of mas - si / c / n composites reduces obviously with the increase of frequency , and its tg is quite high , so it is a possible candidate for absorber layer of high temperature radar absorbing materials 随着烧结时间(烧结温度为1200 )的增长， mas - si c n复合材料的介电常数实部和虚部增大，随着吸收剂含量的增多， mas - si c n复合材料的介电常数实部、虚部和介电损耗角正切均增大。
This paper introduces in detail the future application of baxsr1 - xtio3 ( bst ) thin film and the main problems of this material and the method to solve these problems . to enhance the dielectric constant and at the same time low the loss tangent , polycrystalline batios / srtios multilayered thin films have been prepared on pt / ti / sio2 / si substrates by a sol - gel processing 为进一步提高介电常数并同时保持其介电损耗在较低的值，本文中采用了sol - gel法制备多层膜的方法， xrd和aes表明多晶batio _ 3 srtio _ 3多层膜较好的沉积于pt ti sio _ 2 si的衬底上。
