With this comes the threat of increased failure rates due to high device temperatures if cooling is not adequate 本公司对于电力半导体器件和电源等变流装置的散热和温控能从系统设计上解决问题。
Power semiconductor devices develop continuously for high frequency , high efficiency and intellectualization . it demands that power electronic control system has much higher real - time capability 随着电力半导体器件不断地向高频、高效和智能化方向发展，电力电子控制系统的实时性要求越来越高。
In this paper , a parallel - resonance induction heating power for equipments that used to grow laser crystal has been developed , it applies power electronics theory and adopts full - controllable electric semiconductor device igbt 本文基于电力电子理论，采用全控型电力半导体器件igbt ，研制了适用于激光晶体生长设备的中频感应加热电源。
As a part of the project - " ups system for voyage aid of the airport " , the power supply which takes place of scr with igbt and uses the technology of " pwm " and " spwm " presents constant current for voyage aid 本文所述逆变电源作为课题“机场助航不间断电源( ups )系统”的一部分，以现代电力电子器件igbt代替传统电力半导体器件scr ，采用pwm和spwm控制技术，实现机场助航的恒流供电。
With the development of electronic technology in the field of high - frequency and high - power , power mosfet is gradually enhancing its important status in semiconductor apparatus and is being widely applied in power converters as switch . with the increasing of the operating frequency ( > 200khz ) , the energy loss caused by parasitic capacitance will affect the efficiency of power transforming in converters . especially in the applications of high frequency power supply using mosfet as main devices ( the unit of frequency is mhz ) , the energy loss caused by the switch process will badly affect its efficiency 随着电力电子技术进一步向高频的大功率用电领域发展，功率mosfet在各种电力半导体器件中的重要地位日益显著，使用功率mosfet作为开关器件的功率转换电路也日益增多，但随着器件开关频率的提高(大于200khz ) ，由器件极间电容引起的能量损耗将会影响到功率转换电路的能量传输效率，特别是在以mosfet作为开关器件的高频感应加热电源中(工作频率可达兆赫) ， mosfet在开关过程中的能量损耗严重影响到电源的效率，因此如何减小开关器件的损耗提高高频功率转换线路的效率成为电力电子技术领域的重要研究课题之一。
