Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property . many researches have been made on silicon nitride , especially on preparation for it with all kinds of cvd ( chemical vapor deposition ) . but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail , especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment 氮化硅( si _ 3n _ 4 )具有许多特殊的优越性能，是一种前景广阔的薄膜材料，并已广泛应用于微电子、光电子领域，人们对此做了大量的研究，但主要集中在用各种化学气相沉积的薄膜制备上，对直接氮化法的机理和动力学研究较少，特别是硅片在氮气保护的热处理条件下的直接氮化行为研究更少，甚至对硅片在热处理条件下能否与惰性的氮气发生反应等问题依然存在争论。
