Influence of strain on subband structure is described by a factor dk , which is the phonon induced band deformation potential extracted from experiment data . in strained si conduction band , the value of dk is 2 . 4 times larger than its si counterpart 在该模型中,应力对子能带结构的影响通过声子的形变势能dk表示, dk为经实验修正得到的经验参数,在应变硅导带中,其值是体硅材料形变势能的2 . 4倍。
Compared with gunn diode , mesfet has the advantage of high efficiency , flexible design and easy to integrate . the two ports negative resistance oscillating network is analyzed and an extremum - line model of microwave transistor oscillating network output impedance is developed Mesfet较之gunn二极管在vco电路中有效率高、设计灵活性、便于集成等优点，所以本文着重介绍了变容管调谐微带结构mesfetvco的研制工作。
In this thesis , a new finite difference time domain ( fdtd ) method is developed to treat a two - dimensional photonic crystal consisting of nearly - free - electron metals . the method is used to calculate the band structures and investigate defect modes and guide modes in such a photonic crystal 本论文首先发展了一种基于等离子模型的有限差分计算方法，并应用于二维金属光子晶体，有效地计算了该类光子晶体的能带结构。
Through studying about tectonic units established , old plates rebuilded , original basins restored , texture and structure of orogenic belt , mechanism and model of orogeny , it is definded that the type of beishan orogenic belt is continent - accretion arc collosion orogenic belt 通过对造山带构造单元的建立、古板块重建、原型盆地恢复、造山带结构、构造特徵及造山机制和模式的研究，确定北山造山带类型为陆增生弧碰撞造山带。
While simulating the resonant circuits , we finished a microstrip resonance , which has high q - factor and fits to design w - band low phase noise oscillators . select beam lead hyperabrupt junction varactor and gunn die made in china as vco ’ s frequency turning component and minus resistance 此外,文中还对w频段微带结构直流偏置网络、微带波导过渡等外围电路进行了仿真优化,设计方法和结论对毫米波微带电路设计具有通用的参考价值。
The difficulty in design microstrip pin sp3t switch is the via hole for grounding . we use both the radial parts and the via hole to get a good result . the fin - line pin switch is fully simulated using full - wave analysis , the parasitic parameter and the circuit assemble need to be considered 微带结构上过孔微波接地效果的不理想,是微带单刀三掷开关的难点,本文采用了扇形的微波接地和过孔直流接地结合起来,较好的解决了这一问题。
Lastly , we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition , procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature 最后利用格林函数方法讨论了光格子中超冷原子的能带结构，根据mott相存在能隙的判据我们在平均场近似下重新得到superfluid - mott相变条件，该结论与相关文献一致。
By sufficiently making use of the knowledge of the semiconductor , we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism , the structure of the energy band and the crystal potential field 本文充分利用半导体的能带理论，从薄膜晶体结构、能带结构和晶体势场的角度，分析载流子的迁移、散射以及载流子的产生和晶体结构缺陷对载流子的捕获。
The main contents and contributions include : ( 1 ) it has been proposed to uniform the temperature distribution through space modulating the intensity incident on the surface of substrate using a mask the emphasis of this method is to find the laser intensity distribution that can realize the temperature uniformity . the results show that when the mean temperature rise in the processed area is 500 k , the maximum temperature difference is 3 . 5 k , which can meet the accurancy requirement of temperature uniformity 计算结果表明,采用四环带结构的掩膜板对入射光进行调制,在0 . 2倍光斑半径区域内平均温升达到500k时,最大温差只有3 . 5k ( 0 . 4倍半径处仅有4 . 5k左右) ,可以在激光微细加工区域得到比较满意的温度分布。
In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet 本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。
