Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688 电子元器件详细规范. 3da2688型硅npn高频放大管壳额定的双极型晶体管
With respect to a bipolar transistor , the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction 就双极型晶体管而言,其门电流等于或超过必要的值,使发射极集电极充分导通的一种状态。
Based on the analysis of the tradition instrument xj4810 , general configuration and working principle of this virtual instrument were discussed 在分析传统xj4810型晶体管特性图示仪的电路结构和功能实现的基础上,结合虚拟仪器的基本特点,确立了整个系统构成。
Semiconductor devices - discrete devices . part 7 : bipolar transistors . section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification 半导体器件分立器件第7部分:双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范
Semiconductor devices - discrete devices . part 7 : bipolar transistors . section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification 半导体器件分立器件第7部分:双极型晶体管第一篇高低频放大环境额定的双极型晶体管空白详细规范
A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter . it takes 80c196mc single - chip as core processor 电源变换器的功率开关器件采用现代电力电子功率器件igbt ( insulategatebipolartransistor ,绝缘栅双极型晶体管) ,控制系统以80c196mc单片机作为控制核心。
Introduced the advantages and disadvantages of the bipolar transistor , mos - fet transistor , ldmos - fet transistor , and the parameters of mos - fet transistor , ldmos - fet transistor in the uhf , which presents the advanced technology over the world 介绍了双极型晶体管、 mos ? fet晶体管、 ldmos ? fet晶体管的优缺点，介绍了最新开发的，代表目前国际先进水平的，工作在uhf波段的部分mos ? fet晶体管、 ldmos ? fet晶体管的技术参数。
The dominance and properties of the cmos integrated reference were also described , and the research meaning was pointed out . related device theory and process model used in design were described . the temperature related model and the influencing factor of two active devices , subthreshold mosfet and pnp substrate transistor , based on cmos process were analyzed and compared , and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference 阐述了设计中相关的器件理论与工艺模型,对cmos工艺下的两种有源器件,即亚阈值工作状态下的金属场效应晶体管( mosfet )及衬底pnp双极型晶体管( bjt )的温度模型及其影响因素进行了分析和比较,指明衬底pnp双极型晶体管更适合作为基准源的温度补偿元件。
According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively . ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current . when modulated signals of spwm are changed , the on - off time of switches also changes , so as to the voltage and frequency of output signals 本文提出了一种基于dsp (数字信号处理器tms320f240 )的通用的三相间接变频电源系统，利用分段同步调制法和混合查表法，实时计算不同频率下的采样周期、电压幅值、输出脉宽，产生双极性spwm波形，经驱动放大后用于ipm ( intelligentpowermodule )中的绝缘栅双极型晶体管栅级驱动，以控制电源的输出电压和频率，实现变频电源的智能数字控制。
Mingxin has set up 15 automatic production lines with stable and reliable assembly processes such as to - 251 ipak , to - 251 - 5l , to - 252 dpak , to - 252 - 5l , to - 220 , to - 262 , to - 263 d2pak , to - 126 , sot - 82 , to - 92 , to - 92sp , sot - 54 , sot - 23 , sot - 223 to - 247 , etc . our major products are all kinds of power , medium and small signal semiconductors including bipolar transistors , mosfet , jfet , thyristor , bsit and power ic , etc . our products are widely applied for computer , telecommunication equipment , home application , motor driver , energy saving light , instruments and meters , controller , dc motor driver , microphone , sound system , electrical control toy and other consumer appliances , etc Pak to - 126 sot - 82 to - 92 to - 92sp sot - 54 sot - 23 sot - 223 to - 247等15条单机自动化生产线，专业生产各类双极型晶体管可控硅场效应管mosfet以及bsit功率ic等各类大中小功率半导体器件。产品广泛地应用于计算机及外围设备通讯设备家用电器汽车电子绿色照明仪器仪表各类控制器马达驱动器传声器音响系统电控玩具及其它消费电子电器等领域。
