Semiconductor discrete device . detail specification for type cs0529 gaas microwave power field effect transistor 半导体分立器件. cs0529型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device . detail specification for type cs0532 gaas microwave power field effect transistor 半导体分立器件. cs0532型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device . detail specification for type cs203 gaas microwave low noise field effect transistor 半导体分立器件. cs203型砷化镓微波低噪声场效应晶体管详细规范
Based on this , infrared detector and field effect transistor were fabricated and the properties were also tested 并在此基础上，制备得到了碳纳米管基的红外探测器和场效应晶体管。
We found that the polaronic effects and electric field effects have significant contributions to the ground state energy 我们发现极化子效应和外电场效应对基态能量都有显著影响。
Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications 半导体分立器件.电力开关设备的金属氧化物半导体场效应晶体管
Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs146 半导体分立器件. cs146型硅n沟道耗尽型场效应晶体管.详细规范
Semiconductor discrete device . detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor 半导体分立器件. cs141型硅n沟道mos耗尽型场效应晶体管详细规范
Semiconductor discrete device . detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor 半导体分立器件. cs140型硅n沟道mos耗尽型场效应晶体管.详细规范
Semiconductor discrete device . detail specification for type cs0530 and cs0531 gaas microwave power field effect transistor 半导体分立器件. cs0530 cs0531型砷化镓微波功率场效应晶体管详细规范
