Firstly , a new interface roughness scattering model is developed using exponential autocovariance functions . the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data 先推导了一种sic反型层表面粗糙散射的指数模型，研究证明应用此模型能够更精确地研究sicmos沟道载流子的输运规律。
It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states 明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。
The project includes three main subjects : the urban texture of public spaces in shenzhen , the scenario and features of public lives in public spaces , and the “ reversed public spaces ” created through “ reversed use “ or private intrusion 主要内容有：典型空间场所的分布肌理及特征分析；公共空间及公共生活的真实记录及特质的呈现；对由”反向使用” 、 ”公共私用”等方式创造的”反型公共空间”的观察与分析
Then , a comprehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface . this model takes into account the effects of the charged - centers correlation 当有效横向电场较低时，库仑散射在sic反型层的电子输运中起主要散射作用，而当有效横向电场升高时，表面粗糙散射的作用会变得愈来愈显著。
On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range 3 .由于lc压控振荡器中的pn结变容管品质因数低、调谐范围小,本次设计的lc压控振荡器采用了强反型mos变容管,仿真结果表明,所设计的lc压控振荡器具有15 %调谐范围。
In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet 本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。
In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers 本文就sio _ 2 / sic界面质量对n沟sicmosfet性能的影响做了深入的研究：从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用sicmos反型层薄层电荷数值模型，研究了杂质不完全离化对p型6h - sicmosc - v特性的影响。
According to its uses , lcd panel can be classified into 9 categories such as communication , domestic electrical appliance , palm computer , transportation means , measuring apparatus , meters and instruments , stationery , entertainment facility and others . according to display methods , lcd panel can be divided into two types , i . e . positive and negative types . according to optical modes , lcd panel falls into four categories , namely , reflective , transmissive , transflective and holographic types 液晶显示屏lcd分类方式有多种，如：按产品用途，可分为通信工具家用电器掌上电脑交通工具计量器械仪器仪表文教器具游艺设施等类别按显示方式，可分为正性负性两类按光学模式，可分为反射型透射型半透半反型全息型等4类按lcd类别，可分为tn型htn型stn型fstn型按颜色模式，可分为黄绿灰黑白蓝等按观察方向，可分为3 6 9 12点钟及其它等。
Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied . the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too . the accumulation - mode varactor , which has a higher quality factor value than the inversion - mode mos varactor , is studied in detail 研究电感和变容管这两种射频集成无源器件的寄生效应和射频mos晶体管的热噪声模型,提出集成电感的设计原则和优化方法,详细研究了一种新型的积累型mos可变电容,这种积累型mos变容管比一般的反型mos变容管有更高的品质因数。
The other is the design of amplifier with constant trans - conductance ( gm ) rail - to - rail input stage . when common mode input voltage changes , it provides nearly constant - gm independent of input transistor operating region ( strong , moderate or weak inversion ) , and the quiet nods of the circuit for current addition and the output stage keep unchanged 当输入共模电压变化时,不管它的输入mos差分对管处于强反型区还是弱反型区,输入级的跨度保持不变,而且输入级后面的电流加法电路和输出级的静态工作点也不会随之改变。
