单粒子

• Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ) . in this paper , some means to harden the devices against these phenomena are used . guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup
  在本文设计中，采用双环保护结构，大大的降低了cmos集成电路对单粒子闩锁效应的敏感性；对nmos管采用环型栅结构代替传统的双边器件结构，消除了辐射感生边缘寄生晶体管漏电效应；采用附加晶体管的冗余锁存结构，减轻了单粒子翻转效应的影响。