We prepared sample l , sample 2 with single coil . and sample 3 , sample 4 with two series coils . in this paper we discussed the frequency - dependence of theis inductance , resistance and quality factor ( q - value ) in a range of l00mhz - l0ghz 本实验中制作了单个线圈的样品1和样品2以及串联的样品3和样品4 ，文中报告了这些薄膜电感的电感、电阻和q值在100mhz - 10ghz范围内的频谱特性。
Secondly , the passive elements including resistance , capacitance and inductor in cmos have been studied , after the analysis of the models of the capacitance and the inductor , many method of analysis and optimize the on - chip inductor are explained 随后,介绍了cmos工艺中的无源器件:电阻、电容和电感的具体实现方式,随后仔细分析了电容和电感的模型并提出了几种提高电感q值的方法。
At last , taking advantage of the finite differential time domain method and it ' s perfect match layer absorbcfacient border , we got the energy distribution in a typical micro - disk laser and simulated the radiation between q value and the radius of the micro - disk 最后运用电磁场时域有限差分法( fdtd ) ，采用具有很好吸收效果的完全匹配层吸收边界，研究了典型微盘激光器的能量分布以及微盘的q值随微盘半径尺寸的变化。
Many approaches have been proposed to achieve better rf / microwave performance of passive elements on low - r si substrates . the use of high - resistivity ( > 3000q . c / ? silicon substrate is suggested to mimic the low - loss semi - insulating gaas substrate , but this is an uncommon option for current silicon substrate 然而，由于低阻硅衬底的高频损耗，在射频微波应用中，要在低阻硅衬底上实现高q值的无源器件，尤其是电感，是相当困难的。
It is capable to lower the insertion loss by using high conductivity electrode material and increasing the electrode thickness and quality factor of bst capacitor . at the same time increasing the tunability of the dielectric constant and the length of the transmission line can increase the phase shift 通过使用高电导率的电极材料、增加电极的厚度、提高bst薄膜电容的q值可以实现器件插损的降低；增大薄膜的介电系数变化率和传输线长度可以增加移相度。
Major contents and results of the study are abstracted as following : 1 . the review of integrated inductors is given and the structure and model of integrated inductors are introduced . the sense and the expression of the quality factor of integrated inductors are explained and induced 在大量文献调研的基础上，总结了硅集成电感的研究现状与进展，详细介绍了硅集成电感的结构和模型，分析了集成电感q值的含义，推导了平面螺旋型硅集成电感q值的表达式。
The probe ' s linearity , temperature and dynamic characteristics are analyzed base on principal theory of eddy - current displacement sensor , such as the influence of the coil q value to the linearity characteristic , influence of the diameter of coil to the linearity characteristic , influence of coil resistance to the temperature characteristic , influence of the measuring coil to the syntony loop 在介绍涡流位移传感器的基本理论的基础上，分析了传感器探头线性特性、温度特性、动态特性的影响因素。从探头线圈q值对线性特性的影响；探头直径对线性的影响；探头线圈电阻对温度特性的影响；激励信号温度特性的影响：检测线圈?振回路动态响应特性等方面分析并提出制作高质量传感器探头的改进措施。
Methods of calculating the inductor ' s quality factor and inductance are studied . experimental results are analyzed in detail and some results are obtained : quality factor q decreasing with the increase of turns n ; inductance l proportional to turns n2 ; series resistance rs increasing - iv - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ as g - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ with frequency due to skin effect 得出了一些有用的结论如平面螺旋电感的q值随着圈数n的增加而减小；电感量与圈数n的平方成正比；高频时，圈数越多，串联电阻的趋肤效应越厉害，阻值越大等。
Using the structure of diffused electric doublet layer based on dlvo theory , we analyze the factors which influence the cofe2o4 ionic magnetic fluid ' s stability , and they include magnetic particles " diameter d , magnetic fluid ' s q , magnetic particulate volume ratio v , and the viscous layer on the surface of particles 以dlvo理论为基础，利用扩散双电层结构分析得知，影响cofe _ 2o _ 4离子型磁性液体稳定性的因素有：磁性微粒粒径d 、磁性液体的q值、磁性微粒的体积分数_ ，以及磁性微粒表面粘性层的存在。
As a planar structure , microstrip fit for hybrid integrity , but their disadvantages also exist : the dissipation loss caused by conductor , radiation , and dielectric , therefore , they are not suitable to be used in millimeter wave applications and couldn ’ t compose high q passive components 微带线作为一种平面电路结构,适合于系统的混合集成,但是这种结构也存在一定的缺陷,由于导体损耗、辐射损耗和介质损耗的存在,使得它不适于工作在毫米波波段,也无法构成高q值的部件。
